Lateral spin transport in silicon-based low-dimensional systems

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I explored basic technologies to combine spintronics with semiconductor low-dimensional lateral devices. For Si/SiGe two-dimensional systems, I found that significant spin-dependent tunneling of electrons between quantum-Hall states at low temperatures.For spin injection into a semiconductor quantum dot, I fabricate InAs quantum dot/ferromagnet lateral devices. As a result, I observed anomalous current suppression for the two-electron tunneling regime.