Control of band structure in strained silicide structures

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Semiconducting silicide, beta-FeSi2, is a novel silicon-optoelectronic material which shows photoresponse and light emission in the wavelength range of near infrared. In this study, we have studied the strain-induced modification of band structure in beta-FeSi2. In the results, it was revealed that an introduction of strain along a-axis direction of the beta-FeSi2 epitaxial film is effective to control the band structure from indirect transition type to direct transition one. In addition, we have succeeded in the growth of high quality beta-FeSi2 epitaxial film with low residual carrier concentration.