Development of spintronics devices with using negative spin polarization materials

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We succeeded for the single phase synthesis of Mn4N and Co3FeN thin films that have isomorphic structure to Fe4N showing negative spin polarization. The Mn4N thin films exhibited perpendicular magnetic anisotropy. We constructed a theory for anisotropic magnetoresistance (AMR) effects, which takes into account the spin-orbit interaction and the crystal field splitting. Negative AMR ratio observed for the Co3FeN thin films indicated a possibility of them to be half-metals. Inverse tunnel magnetoresistance effects were observed for Fe4N-based magnetic tunnel junctions with a spinel tunnel barrier. High efficiency for spin current generation under ferromagnetic resonance was suggested for Fe4N/Pt bilayers by their large inverse spin Hall signals.