Fabrication of full metal CPP-spin valves with atomic order spacer layer and their magnetoresistance effect

点击翻译按钮获取中文摘要

In order to develop a multilayer material in which magnetic moments steeply change their direction within atomic-order thickness, current-perpendicular to plane (CPP) magnetoresistance thin-film devices, consisted of Co based ferromagnetic layer and Ru spacer layer, were fabricated with UHV-sputtering method, and their transport properties were investigated. The interfacial uncompensated spins of Mn-Ir/ ferromagnetic bilayerswere also investigated with changing the ferromagnetic material. As a result, the exchange interaction at the interface and crystal structure of the ferromagnet were found to be important for large exchange anisotropy.