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DEVELOPMENT OF HIGH SENSITIVE THIN-FILM MAGNETIC SENSORS BY APPLYING THE IMPURITY REDULATED SPUTTERING PROCESS

DEVELOPMENT OF HIGH SENSITIVE THIN-FILM MAGNETIC SENSORS BY APPLYING THE IMPURITY REDULATED SPUTTERING PROCESS
应用减杂溅射工艺开发高灵敏度薄膜磁传感器
批准号:
11555105
负责人:
TSUNODA Masakiyo
金额:
$8.7万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B).
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000

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中文摘要
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英文摘要
The giant magnetoresistance(GMR)effect in metallic multilayer has been actively investigated to be applied to magnetic sensors. Key technical factors to obtain sensitive MR response are 1)flat interfaces of multilayers to retain large MR ratio and 2)soft magnetic properties of ferromagnetic layers, such as Co iud Co-Fe. These two factors are realized with controlling impurities in fabrication process. Introducing oxygen into the sputtering atmosphere during the deposition is an effective way to improve the interfacial flatness, which has been demonstrated for Co/Cu multilayers by the present authors. Nitrogen and boron are well-know additives to make magnetic softering of Co-Fe films. In the present study, in order to clarify the role of oxygen on GMR more precisely, Co/Cu multilayers were fabricated under different sputtering atmospheres in which the impurity oxygen content was changed dramatically from 0.1 ppm to 0.1 % within processing Ar gas. The correlation between the MR ratio and microstructure of the multilayers, especially the interfacial roughess, was investigated as a function of the partial pressure of oxygen introduced into the sputtering chamber. The MR ratio drastically increased from less than 20 % to 54 % when the content of impurity oxygen was slightly increased from 20 ppm to 80 ppm, then nearly varished when the content become more than 200 ppm. In the former region where the MR ratio steeply increased, the root mean square rougtness of the multilayers decreased from 6.5 Å to 4.5 Å accompanied by a reduction of in grain size as the oxygen content was increased. The partial oxidation of the multilayers is the most probable mechanism by which the flattening of the interfaces in the multilayer can be explained.
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S.Miura: "Drastic change of giant magnetoresistance of Co/Cu multilayers by decreasing residual impurities in sputtering atmosphere"Journal of Applied Physics. 85. 4463-4465 (1999)
S.Miura:“通过减少溅射气氛中的残留杂质,大幅改变Co/Cu多层膜的巨磁阻”应用物理学杂志。
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S.Miura: "Drastic change of giant magnetoresistance of Co/Cu multilayers by decreasing residual impurities in sputtering atmosphere"J.Appl.Phys.. 85. 4463-4465 (1999)
S.Miura:“通过减少溅射气氛中的残留杂质来显着改变 Co/Cu 多层膜的巨磁阻”J.Appl.Phys.. 85. 4463-4465 (1999)
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通讯作者:
S.Miura: "Role of oxygen in the film growth and giant magnetoresistance of Co/Cu multilayers"Journal of Applied Physics. (2001)
S.Miura:“氧在 Co/Cu 多层膜生长和巨磁阻中的作用”应用物理杂志。
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三浦聡: "微量酸素添加スパッタ雰囲気中で作製したCo-Fe/Cu多層膜のGMR効果"日本応用磁気学会誌. (2001)
Satoshi Miura:“在含有少量氧气的溅射气氛中制造的Co-Fe/Cu多层膜的GMR效应”日本应用磁学学会杂志(2001)。
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