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DEVELOPMENT OF HIGH SENSITIVE THIN-FILM MAGNETIC SENSORS BY APPLYING THE IMPURITY REDULATED SPUTTERING PROCESS

应用减杂溅射工艺开发高灵敏度薄膜磁传感器

基本信息

批准号：
11555105
负责人：
TSUNODA Masakiyo
金额：
$ 8.7万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555105/
关键词：
METALLIC MULTILAYER THIN FILMS MAGNETORESISTANCE MAGNETIC SENSOR IMPURITY GASES ULTRA HIGH VACUUM SPUTTERING センサー

项目摘要

The giant magnetoresistance(GMR)effect in metallic multilayer has been actively investigated to be applied to magnetic sensors. Key technical factors to obtain sensitive MR response are 1)flat interfaces of multilayers to retain large MR ratio and 2)soft magnetic properties of ferromagnetic layers, such as Co iud Co-Fe. These two factors are realized with controlling impurities in fabrication process. Introducing oxygen into the sputtering atmosphere during the deposition is an effective way to improve the interfacial flatness, which has been demonstrated for Co/Cu multilayers by the present authors. Nitrogen and boron are well-know additives to make magnetic softering of Co-Fe films. In the present study, in order to clarify the role of oxygen on GMR more precisely, Co/Cu multilayers were fabricated under different sputtering atmospheres in which the impurity oxygen content was changed dramatically from 0.1 ppm to 0.1 % within processing Ar gas. The correlation between the MR ratio and microstructure of the multilayers, especially the interfacial roughess, was investigated as a function of the partial pressure of oxygen introduced into the sputtering chamber. The MR ratio drastically increased from less than 20 % to 54 % when the content of impurity oxygen was slightly increased from 20 ppm to 80 ppm, then nearly varished when the content become more than 200 ppm. In the former region where the MR ratio steeply increased, the root mean square rougtness of the multilayers decreased from 6.5 Å to 4.5 Å accompanied by a reduction of in grain size as the oxygen content was increased. The partial oxidation of the multilayers is the most probable mechanism by which the flattening of the interfaces in the multilayer can be explained.

金属多层膜的巨磁电阻（GMR）效应已被积极研究，以应用于磁传感器。获得灵敏的MR响应的关键技术因素是1）多层膜的平坦界面以保持大的MR比和2）铁磁层（例如Co iud Co-Fe）的软磁性质。这两个因素是通过控制制造过程中的杂质来实现的。在溅射气氛中引入氧气是改善界面平整度的有效途径，这一点已被本作者在Co/Cu多层膜中证实。氮和硼是使Co-Fe薄膜磁软化的众所周知的添加剂。在本研究中，为了更精确地阐明氧对GMR的作用，在不同的溅射气氛下制备了Co/Cu多层膜，其中杂质氧含量在处理Ar气中从0.1 ppm急剧变化到0.1%。的MR比和多层膜的微观结构，特别是界面粗糙度之间的相关性，作为引入到溅射室中的氧分压的函数进行了研究。当杂质氧含量从20 ppm增加到80 ppm时，MR比从小于20%急剧增加到54%，当杂质氧含量超过200 ppm时，MR比几乎变化。在前一区域，MR比急剧增加，随着氧含量的增加，多层膜的均方根粗糙度从6.5 μ m降低到4.5 μ m，同时晶粒尺寸减小。多层膜的部分氧化是最可能的机制，通过该机制可以解释多层膜中界面的平坦化。