Growth and characterization of short-wavelength surface emitting lasers based on GaN

基于 GaN 的短波长表面发射激光器的生长和表征

• 批准号: 5403258
• 负责人: Professor Dr. Detlef Hommel
• 金额: --
• 依托单位: Institut für Festkörperphysik (IFP)
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2003
• 资助国家: 德国
• 起止时间: 2002-12-31 至 2009-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5403258?language=en
• 关键词: Growth; characterization; short; wavelength; surface

The aim of the project is the fabrication and investigation of nitride-based vertical cavity surface-emitting lasers in the blue-UV spectral range containing in its final stage quantum dots as the active region. Within the scope of the project the epitaxial growth process of the VCSEL structures has to be developed. This includes in particular the growth of doped high-reflectivity distributed Bragg reflectors and resonators with high quality factors using metal-organic vapour phase epitaxy and molecular beam epitaxy. These structures will then be analyzed with regard to their linear optical properties (reflection, photoluminescence, Micro-PL and Micro-PL excitation spectroscopy on single QDs) and lasing properties optical gain, temperature dependence of threshold, transversal mode structure, lasing dynamics).

该项目的目的是制造和研究蓝紫外光波段的氮化物基垂直腔面发射激光器，其最终阶段包含量子点作为有源区。在该项目的范围内，必须开发VCSEL结构的外延生长过程。这尤其包括使用金属-有机气相外延和分子束外延生长掺杂的高反射率分布布拉格反射器和高品质因数的谐振器。然后将分析这些结构的线性光学性质(单个量子点上的反射、光致发光、Micro-PL和Micro-PL激发光谱)和激光特性(光学增益、阈值的温度依赖性、横模结构、激光动力学)。