Growth and characterization of short-wavelength surface emitting lasers based on GaN

该项目的目的是制造和研究蓝紫外光谱范围内的氮化物基垂直腔面发射激光器，其最后阶段包含量子点作为有源区。在该项目的范围内，VCSEL结构的外延生长工艺必须得到开发。这特别包括使用金属有机气相外延和分子束外延生长掺杂的高反射率分布式布拉格反射器和具有高品质因数的谐振器。然后将分析这些结构的线性光学特性（反射、光致发光、单个QD上的Micro-PL和Micro-PL激发光谱）和激光特性（光学增益、阈值的温度依赖性、横模结构、激光动力学）。

The aim of the project is the fabrication and investigation of nitride-based vertical cavity surface-emitting lasers in the blue-UV spectral range containing in its final stage quantum dots as the active region. Within the scope of the project the epitaxial growth process of the VCSEL structures has to be developed. This includes in particular the growth of doped high-reflectivity distributed Bragg reflectors and resonators with high quality factors using metal-organic vapour phase epitaxy and molecular beam epitaxy. These structures will then be analyzed with regard to their linear optical properties (reflection, photoluminescence, Micro-PL and Micro-PL excitation spectroscopy on single QDs) and lasing properties optical gain, temperature dependence of threshold, transversal mode structure, lasing dynamics).