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SEMICONDUCTING PROPERTIES OF BORON-CHELATING BITHIOPHENE DERIVATIVES EXTENDED BY OLEFINIC AND ACETYLENIC SPACERS

SEMICONDUCTING PROPERTIES OF BORON-CHELATING BITHIOPHENE DERIVATIVES EXTENDED BY OLEFINIC AND ACETYLENIC SPACERS
烯基和乙炔间隔基延伸的硼螯合二噻吩衍生物的半导体性能
批准号:
23550050
负责人:
ONO Katsuhiko
金额:
$3.33万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013

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中文摘要
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英文摘要
Boron-chelating bithiophene derivatives containing olefinic and acetylenic spacers have synthesized in the research and development of n-type organic semiconductors. These compounds have a quadrupolar structure, in which two positive charges are delocalized on the pi-conjugated system and two negative charges are localized on each boron atom. The olefinic spacers effectively reduce the on-site Coulomb repulsion on the pi-conjugated system according to the electrochemical experiments and hydrolytic analysis. In the crystals, these molecules are stacked into a molecular column, which is assembled to form a layer-by-layer structure. The n-type semiconducting properties of the new compounds are under study.
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