Synthesis and characterization of metal silicides including volatile metals

含挥发性金属的金属硅化物的合成与表征

• 批准号: 23550222
• 负责人: YAMADA Takahiro
• 金额: $ 3.41万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23550222/
• 关键词: シリサイド; スズ化物; 鉛化物; 熱電材料; 結晶構造; 相転移; 熱電変換材料; 結晶構造相転移; シリコン多孔体; スズ化合物

New ternary sodium-magnesium stannides and plumbides, Na2MgX (X=Sn, Pb), Na2Mg3X2, (X=Sn, Pb), and Na4Mg4Sn3, were synthesized by heating the constituent elements. Their crystal structures were determined by single-crystal X-ray diffraction and the thermoelectric power factors were estimated from the measured Seebeck coefficients and electrical conductivities. Na2MgSn, which crystallizes in the Li2CuAs-type structure (hexagonal, P63/mmc, Z = 2, a = 0.50486(11) nm, c = 1.0095(2) nm), showed highest power factor of 1.5x10-3 Wm-1K-1 at 300 K among the novel compounds.Polycrystalline Si powder consisting of micro-porous grains was prepared by heating Mg2Si powder at 873 K for 40 h under a pressure of 500 Pa. The porous Si grains were composed of submicrometer- to micrometer-sized Si crystals with open spaces. The formation of the porous Si grains was attributed to Mg evaporation from Mg2Si grains, followed by crystallization of Si.

通过加热合成了新的三元钠镁锡化物和铅化物：Na2MgX(X=Sn3Pb2)、Na2Mg3X2(X=Sn3Pb2)和Na4Mg4Sn3。用单晶X射线衍射法测定了它们的晶体结构，并根据测得的塞贝克系数和电导率估算了它们的热电功率因子。Na2MgSn六方结构(P63/MMC，Z=2，a=0.50486(11)nm，c=1.0095(2)nm)在300K时具有最高的功率因数1.5×10-3Wm-1K-1。多孔硅颗粒由亚微米到微米大小的开放空间的硅晶体组成。多孔硅颗粒的形成归因于镁从镁硅颗粒中蒸发，然后硅晶化。

项目成果

Na-Mg-Sn系新規化合物の合成と結晶構造および電気的特性

新型Na-Mg-Sn化合物的合成、晶体结构及电学性能

• 发表时间: 2012
• 作者: 油井研一;森下卓;酒井健一;酒井秀樹;阿部正彦;二木史朗;坂本一民;T. Miyamae;石山亮,山田高広,山根久典
• 通讯作者: 石山亮,山田高広,山根久典

Naを用いたケイ化物およびスズ化物系熱電材料の合成

Na 合成硅化物和锡化物热电材料

• 发表时间: 2012
• 作者: Shogo Miura;Jaebuem Oh;Misun Ryu;Haeseong Lee;Jin Jang;Chyongjin Pac;Hiroshi Moriyama;山田高広
• 通讯作者: 山田高広

新規鉛化物Na2MgPbの結晶構造と電気的特性

新型氯化物Na2MgPb的晶体结构和电学性能

• 发表时间: 2014
• 作者: 吉村 仁志;仲程 司;藤原 尚;山田高広,池田卓史,山根久典
• 通讯作者: 山田高広,池田卓史,山根久典

Powder X-ray diffraction pattern of NbSi1.9 containing planar stacking faults

含有平面堆垛层错的NbSi1.9的粉末X射线衍射图

• DOI: 10.1016/j.intermet.2011.11.002
• 发表时间: 2012
• 期刊: Intermetallics
• 影响因子: 4.4
• 作者: H. Yamane;H. Sato;T. Yamada
• 通讯作者: T. Yamada

Mg2Si微粒子の新規合成手法の開発

Mg2Si细颗粒的新合成方法的开发

• 发表时间: 2012
• 作者: 内山 幸也;森山 広思;与座 健治;板原浩,旭良司,山田高広,山根久典
• 通讯作者: 板原浩,旭良司,山田高広,山根久典