Theoretical study of the origin of RHEED intensity oscillation during growth by molecular beam epitaxy and of the growth mode

点击翻译按钮获取中文摘要

The origin of RHEED (Reflection High Energy Electron Diffraction) intensity oscillation is studied. In case of homo-epitaxial growth on Si (001), the origin is the phase difference between the wave reflected from the substrate and that from a growing layer. In case of homo-epitaxial growth on GaAs (001), the origin is not unique and depends on the orientation of the step edges of the growing layer relative to the incident beam. When the step edges are perpendicular to the incident beam azimuth, the atomic density is the primary origin. When the step edges are parallel to the incident beam azimuth, the step density is the primary origin. The results should be quite useful as they are expected to be applied to monitoring and controlling epitaxial growth of nano-materials.