Liquid phase growth of nitride semiconductors by using plasma mixture of nitrogen and hydrogen

在微波等离子体中，利用金属镓与氮氢原子反应，在AlN/Al_2O_3衬底上生长出纤锌矿结构的GaN单晶。在微波等离子体中用原子氮对(0001)蓝宝石基片进行氮化处理，制备了AlN/Al_2O_3基片。在AlN/Al_2O_3衬底上生长了约10~61549；m的GaN层，生长速率为2.5~61549 m/h，X射线衍射仪测量结果表明，GaN层几乎取向为(0001)GaN//(0001)蓝宝石。在室温下，PL光谱显示在3.3 eV处有很强的带边发射，没有深能级的黄色发射。半极大时的全宽约为230 meV。这些性质表明，在氮气和氢的混合等离子体中，采用溶液生长的方法在AlN/Al_2O_3衬底上生长出了高晶态GaN。我们还用我们的方法生长了InxGa1-xN(x&lt；0.15)单晶。

GaN single crystals of wurtzite structure were grown on the AlN/Al2O3 substrate by reacting gallium metal with atomic nitrogen-hydrogen in a microwave plasma. AlN/Al2O3 substrates were prepared by nitriding (0001) sapphire substrates with atomic nitrogen in a microwave plasma. GaN layer of about 10 &#61549;m was grown on AlN/Al2O3 substrate with a growth rate of 2.5 &#61549;m/h. It was found that the layer was nearly oriented to (0001)GaN//(0001) sapphire by X-ray diffraction (XRD) measurement. PL spectrum showed a strong band edge emission at 3.3 eV at room temperature without a yellow emission due to deep level. A full-width at half-maximum was approximately 230 meV. These properties suggest high crystalline GaN was grown on the AlN/Al2O3 substrate by solution growth under nitrogen and hydrogen plasma mixture. InxGa1-xN(x<0.15)single crystals were also grown by our methods.