Liquid phase growth of nitride semiconductors by using plasma mixture of nitrogen and hydrogen

利用氮氢等离子体混合物液相生长氮化物半导体

• 批准号: 23560014
• 负责人: OZAWA Tesuo
• 金额: $ 3.33万
• 依托单位: Shizuoka Institute of Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560014/
• 关键词: 窒化物; 液相成長; プラズマ; バルク成長; 混晶; 半導体; AlN; GaN; 溶液成長; 結晶成長; マイク波プラズマ; InGaN; 窒素プラズマ; 窒化物半導体; 低温低圧成長

GaN single crystals of wurtzite structure were grown on the AlN/Al2O3 substrate by reacting gallium metal with atomic nitrogen-hydrogen in a microwave plasma. AlN/Al2O3 substrates were prepared by nitriding (0001) sapphire substrates with atomic nitrogen in a microwave plasma. GaN layer of about 10 &#61549;m was grown on AlN/Al2O3 substrate with a growth rate of 2.5 &#61549;m/h. It was found that the layer was nearly oriented to (0001)GaN//(0001) sapphire by X-ray diffraction (XRD) measurement. PL spectrum showed a strong band edge emission at 3.3 eV at room temperature without a yellow emission due to deep level. A full-width at half-maximum was approximately 230 meV. These properties suggest high crystalline GaN was grown on the AlN/Al2O3 substrate by solution growth under nitrogen and hydrogen plasma mixture. InxGa1-xN(x<0.15)single crystals were also grown by our methods.

在微波等离子体中，金属镓与原子氮氢反应，在AlN/Al2O3衬底上生长出纤锌矿结构的GaN单晶。用原子氮在微波等离子体中氮化（0001）蓝宝石衬底，制备了AlN/Al2O3衬底。在AlN/Al2O3衬底上生长出约10 &#61549；m的GaN层，生长速度为2.5 &#61549;m/h。通过x射线衍射（XRD）测试发现，该层接近于（0001）GaN//(0001)蓝宝石取向。在3.3 eV的室温下，PL光谱显示出较强的带边发射，没有由于深能级引起的黄色发射。半最大值时的全宽度约为230 meV。这些特性表明，在氮氢等离子体混合物的溶液生长下，在AlN/Al2O3衬底上生长出了高结晶GaN。用我们的方法也生长出了InxGa1-xN（x<0.15）单晶。

项目成果

GaN single crystals by solution growth under atomic nitrogen and hydrogen plasma mixture

氮氢原子等离子体混合物溶液生长GaN单晶

• 发表时间: 2011
• 作者: T. Ozawa;N. Harada;M. Dohi;and Y. Hayakawa
• 通讯作者: and Y. Hayakawa

Al-doped ZnO electrode formation for dye sensitized solarcell by gas evaporation method

气体蒸发法形成染料敏化太阳能电池Al掺杂ZnO电极

• 发表时间: 2013
• 作者: Minoru Dohi;Ryo Koizumi;Tetsuo Ozawa
• 通讯作者: Tetsuo Ozawa

AlN single crystal growth on sapphire substrate under atomic nitrogen plasma

原子氮等离子体在蓝宝石衬底上生长 AlN 单晶

• 发表时间: 2013
• 作者: Tetsuo Ozawa;Kiyohiko Katsumata;Minoru Dohi;and Yasuhiro Hayakawa
• 通讯作者: and Yasuhiro Hayakawa