Study of the structure and the mechanism of photoluminescence of the iron silicide nano island by the dynamical analysis of low-energy electron microscopy

本研究利用高空间分辨率的低能电子显微镜（LEEM）研究了硅化铁纳米岛在Si（111）上的初始生长过程。从几种生长方式不同生长阶段的LEEM图像中，直接提取了入射电子能量对低能电子衍射（LEED）强度的依赖关系，并对LEED进行了动力学分析。结构测定的实际空间分辨率约为50 nm。在入射电子能量范围为0 ~ 100 eV的（0,0）光斑之外，获得了半阶光斑的LEED强度，可以精确测定小面积（约几百平方nm）的表面结构。

In this research, the initial growth process of the iron silicide nano islands on Si(111) was studied by the low-energy electron microscopy (LEEM) with high spatial resolution.From the LEEM images at several growth phases of several growth methods, the incident electron energy dependences of the low-energy electron diffraction (LEED) intensity were directly extracted and the dynamical analyses of LEED were performed.The practical spatial resolution of the structure determination was about 50 nm. The LEED intensity of a half order spot in addition to the (0,0) spot with the incident electron energy range from 0 eV to 100 eV was obtained, which enables precise determination of the surface structure of small area (about several hundred square nm).