Direct observation of potential distribution around defect structures in semiconductor in the vicinity of metal/semiconductor interface

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A TEM specimen preparation technique with uniform thickness and damage less has been developed. The technique was applied metal/semiconductor interface to analyze the potential distribution in the semiconductor materials using electron holography. A TEM holder with an electrode controlled by a piezo drive was used to apply forward bias and reversed bias to the interface. I-V carve of local region of the interface could be measured using the holder. Combination technique using the TEM holder and electron holography could measure potential distributions, and the change of depletion layer and the electric field in the semiconductor around the metal/semiconductor interfaces.