High-Speed Vertical-Cavity Laser-Diodes at 1.55µm

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lt is the purpose of this project to identify and investigate the bandwidth-limiting device parameters and to improve the device design and mounting technique of 1.55µm buried tunnel junction (BTJ) VCSELs with respect to optimised modulation bandwidth. In cooperation with the University of Ulm (Ulm), the HHI (Berlin), Infineon (Munich), and the Institute of Semiconductors, the Chinese Academy of Sciences (Beijing) dynamic device models shall be established and small-signals as well as digital modulation shall be performed and analysed. Of particular interest is the device mounting on TO and other headers, and matching of the internal differential resistance of the lasers, that may be quite below 50 ohms in BTJ VCSEL, for optimum speed.