High-Speed Vertical-Cavity Laser-Diodes at 1.55µm

1.55μm 高速垂直腔激光二极管

• 批准号: 5407885
• 负责人: Professor Dr.-Ing. Markus-Christian Amann (†)
• 金额: --
• 依托单位: Institute of Semiconductors
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2003
• 资助国家: 德国
• 起止时间: 2002-12-31 至 2006-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5407885?language=en
• 关键词: Speed; Vertical; Cavity; Laser; Diodes

lt is the purpose of this project to identify and investigate the bandwidth-limiting device parameters and to improve the device design and mounting technique of 1.55µm buried tunnel junction (BTJ) VCSELs with respect to optimised modulation bandwidth. In cooperation with the University of Ulm (Ulm), the HHI (Berlin), Infineon (Munich), and the Institute of Semiconductors, the Chinese Academy of Sciences (Beijing) dynamic device models shall be established and small-signals as well as digital modulation shall be performed and analysed. Of particular interest is the device mounting on TO and other headers, and matching of the internal differential resistance of the lasers, that may be quite below 50 ohms in BTJ VCSEL, for optimum speed.

本项目的目的是识别和研究带宽限制器件参数，并从优化调制带宽的角度改进1.55微米埋地隧道结(BTJ)VCSEL的器件设计和安装技术。中国科学院(北京)将与乌尔姆大学(ULM)、HHI(柏林)、英飞凌(慕尼黑)和半导体研究所合作，建立动态器件模型，并进行小信号和数字调制和分析。特别令人感兴趣的是安装在和其他头上的器件，以及匹配激光器的内部差阻，其在BTJ VCSEL中可能远低于50欧姆，以获得最佳速度。