1.5 um InAs/InP Quantum Dot Vertical-Cavity Surface-Emitting Lasers (QD VCSEL)

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Recent advance in InP quantum well (QW) vertical cavity surface-emitting laser (VCSEL) emitting at 1.5 um has promoted its applications for optical access networks, thanks to their advantages of smaller footprint, wafer-scale testing, lower power consumption and in particular much lower cost compared with conventional edge-emitting counterparts. Corresponding to QW, quantum dot (QD) introduces a reduction of dimensionality of the carrier confinement from 2-D to 0-D, resulting in the formation of a discrete energy level structure, thus QDs would induce improvements in temperature dependence of threshold current and output power, lower threshold current density and increased material gain, high differential gain, and small linewidth enhancement factor for QD lasers. InP QD combined with vertical cavity, i.e. InP QD VCSEL, would lead to better performances in addition to low cost. Indeed, one research work was reported so far, and it was shown that InP QD VCSEL does have a much lower threshold current, i.e. lower power consumption. Dr. Zhang at Concordia has researched InP QD edge-emitting lasers for a decade, collaborating with NRC in Ottawa. This project will kick off research of InAs/InP QD VCSELs, collaborating with University College London (UCL). By this project, the collaboration with UCL in InP QD VCSELs will be established to acquire IPs of design technologies and train HQP. Dr. Liu has strong expertise in fabrication of nano-scale structural devices, such as lasers, whose expertise is complementary to Dr. Zhang, who has investigated and designed QD lasers for 10 years in modeling. This project will kick off collaboration with UCL in UK and start to investigate and design low-cost high-performance InAs/InP QD VCSELs, benefit to Canada in innovated low-cost laser technology.