1.5 um InAs/InP Quantum Dot Vertical-Cavity Surface-Emitting Lasers (QD VCSEL)

1.5 um InAs/InP 量子点垂直腔面发射激光器 (QD VCSEL)

• 批准号: 580932-2022
• 负责人: Zhang, JohnXiupuJX
• 金额: $ 1.82万
• 依托单位: Concordia University
• 依托单位国家: 加拿大
• 项目类别: Alliance Grants
• 财政年份: 2022
• 资助国家: 加拿大
• 起止时间: 2022-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=751999
• 关键词: 1.5; um; InAs; InP; Quantum

Recent advance in InP quantum well (QW) vertical cavity surface-emitting laser (VCSEL) emitting at 1.5 um has promoted its applications for optical access networks, thanks to their advantages of smaller footprint, wafer-scale testing, lower power consumption and in particular much lower cost compared with conventional edge-emitting counterparts. Corresponding to QW, quantum dot (QD) introduces a reduction of dimensionality of the carrier confinement from 2-D to 0-D, resulting in the formation of a discrete energy level structure, thus QDs would induce improvements in temperature dependence of threshold current and output power, lower threshold current density and increased material gain, high differential gain, and small linewidth enhancement factor for QD lasers. InP QD combined with vertical cavity, i.e. InP QD VCSEL, would lead to better performances in addition to low cost. Indeed, one research work was reported so far, and it was shown that InP QD VCSEL does have a much lower threshold current, i.e. lower power consumption. Dr. Zhang at Concordia has researched InP QD edge-emitting lasers for a decade, collaborating with NRC in Ottawa. This project will kick off research of InAs/InP QD VCSELs, collaborating with University College London (UCL). By this project, the collaboration with UCL in InP QD VCSELs will be established to acquire IPs of design technologies and train HQP. Dr. Liu has strong expertise in fabrication of nano-scale structural devices, such as lasers, whose expertise is complementary to Dr. Zhang, who has investigated and designed QD lasers for 10 years in modeling. This project will kick off collaboration with UCL in UK and start to investigate and design low-cost high-performance InAs/InP QD VCSELs, benefit to Canada in innovated low-cost laser technology.

InP量子阱（QW）垂直腔面发射激光器（VCSEL）发射波长为1.5 μ m，与传统的边缘发射激光器相比，具有体积小、可实现晶圆级测试、功耗低、成本低等优点，极大地促进了其在光接入网中的应用。 量子点（QD）与量子阱（QW）相对应，将载流子约束的维度从二维降到了一维，形成了分立的能级结构，从而改善了阈值电流和输出功率的温度依赖性，降低了阈值电流密度，提高了材料增益，提高了微分增益，减小了量子点激光器的线宽增强因子。InP量子点与垂直腔相结合，即InP量子点VCSEL，将导致更好的性能，除了低成本。事实上，到目前为止报道了一项研究工作，并且表明InP QD VCSEL确实具有低得多的阈值电流，即较低的功耗。 Concordia的张博士与渥太华的NRC合作，研究InP QD边发射激光器已有十年。该项目将启动InAs/InP QD VCSEL的研究，与伦敦大学学院（UCL）合作。通过本项目，将与UCL在InP QD VCSEL方面建立合作，以获得设计技术的IP并培养HQP。刘博士在纳米级结构器件的制造方面具有很强的专业知识，如激光器，其专业知识与张博士的专业知识相辅相成，张博士在建模方面研究和设计了10年的QD激光器。 该项目将启动与英国UCL的合作，开始研究和设计低成本高性能的InAs/InP QD VCSEL，为加拿大提供创新的低成本激光技术。