Development of new microprocessing technology of silicon crystalline substrate: internal, three-dimensional, arbitrary-shape removal processing

硅晶基片微加工新技术开发：内部、三维、任意形状去除加工

• 批准号: 23656109
• 负责人: MATSUO Shigeki
• 金额: $ 2.58万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656109/
• 关键词: シリコン; フェムト秒レーザー; 赤外パルス; エッチング; フッ硝酸

We have been developing an internal, three-dimensional, arbitrary-shape removal processing technique for transparent solid substrates. The technique consists of two-step: irradiation focused ultrashort laser pulses and chemical etching. In this research, we tried to apply this technique to silicon, which is opaque in visible but transparent in infrared wavelength longer than about 1.1 μm. We examined several kinds of etchant, and found that selective etching occurs on the back surface when nitric hydrofluoric acid was used as etchant.

我们一直在开发一种内部、三维、任意形状的透明固体基板去除加工技术。该技术包括两个步骤：辐照聚焦超短激光脉冲和化学蚀刻。在本研究中，我们尝试将该技术应用于硅，硅在可见光波段是不透明的，但在波长大于1.1 μm的红外波段是透明的。考察了几种蚀刻剂，发现以氢氟酸作蚀刻剂时，在背表面发生选择性蚀刻。

项目成果

Three-Dimensional Micro Modification and Selective Etching of Crystalline Silicon Using 1.56-μm Subpicosecond Laser Pulses

使用 1.56 μm 亚皮秒激光脉冲对晶体硅进行三维微改性和选择性蚀刻

• 发表时间: 2013
• 作者: 内藤恭平;三木寛之;高木敏行;Michel Belin;東 翔也;金田脩佑;松尾繁樹
• 通讯作者: 松尾繁樹

Three-Dimensional Micro Modification and Selective Etching of Crystalline Silicon Using 1.56-μmSubpicosecond Laser Pulses

使用 1.56 μm 亚皮秒激光脉冲对晶体硅进行三维微改性和选择性蚀刻

• 发表时间: 2013
• 作者: Kyohei Naito;Hiroyuki Miki;Michel Belin;Toshiyuki Takagi;前濱宏樹;松尾繁樹 他
• 通讯作者: 松尾繁樹 他