Molecular simulation of pattern formation in electron beam lithography

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We developed molecular simulation to investigate the pattern formation in electron beam lithography. We introduced the effect of electron exposure by the chain scission of the polymer molecules. The breaking positions in the polymer chain are randomly selected. The chain scission rate is set proportional to the absorbed energy distribution in the polymer materials calculated by the Monte Carlo simulation of the electron scattering. In the development process, the small segments of polymer molecules are removed from the resist structure. Our present simulation revealed the typical structure of atomic scale line edge roughness and electron irradiation damage of the sample.