Study of carbon impurities in bulk multicrystalline silicon

我们研究了太阳能电池用多晶硅中的碳杂质。我们的目标是揭示碳杂质在晶体生长过程中的行为，并量化碳沉淀和溶解杂质的电学性质。对于前者，我们建立了杂质掺入模型，并通过将模型计算结果与晶体生长实验结果进行比较，阐明了杂质掺入机理。对于后者，我们证明了碳沉淀对晶体电学性质的影响。研究溶解碳杂质的影响是未来的挑战。

We investigated carbon impurities in multicrystalline Si for solar cells. Our targets were to reveal the behavior of carbon impurities in the crystal growth process and to quantify the electrical properties of carbon precipitations and dissolved impurities. For the former, we created a model of impurities incorporation and clarified the incorporation mechanism by comparing the calculation results based on the model and the results of crystal growth experiments. For the later, we demonstrated the influence of the carbon precipitates on the electrical properties of the crystal. The investigation for influence of the dissolved carbon impurities is the challenge for the future.