Development of micro filtered-arc-deposition system for preparation of metal nitride film with heat resistance

本研究利用微过滤弧沉积系统制备多元金属氮化物薄膜。然而，出现了放电持续时间短和使用金属阴极加热的问题。在薄膜制备方面，采用新型电弧源制备了铬和氮化（CrN）铝-氮化铬（AlCrN）薄膜。结果表明，采用新型电弧源FAD制备的CrN薄膜与传统FAD制备的CrN薄膜性能相同。然而，AlCrN膜不包括氮到膜中。因此，使用新的电弧源的FAD制备的膜不被氮化。

In this study, micro filtered-arc-deposition (FAD) system was developed for the preparation of multi-element metal nitride film. However, problems which electric discharge duration was short, and heating using the metal cathode were occurred. These problems were solved The problem was solved by design and developing of new arc source.In the film preparation, chromium and nitride (CrN) aluminium-chromium nitride (AlCrN) films were prepared using new arc-source. In the results, the properties of CrN film prepared FAD with new arc-source was same using conventional FAD. Though, AlCrN film was not included nitrogen into the film. So, the film prepared using FAD with new arc-source was not nitrided.