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Epitaxial precipitation of grapheneby microwave plasma chemical vapor deposition

Epitaxial precipitation of grapheneby microwave plasma chemical vapor deposition
微波等离子体化学气相沉积法外延沉积石墨烯
批准号：
23656450
负责人：
MITSUDA Yoshitaka
金额：
$2.41万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Challenging Exploratory Research
财政年份：
2011
资助国家：
日本
项目状态：
已结题
起止时间：
2011 至 2012
来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656450/
关键词：
グラフェン拡散析出マイクロ波CVD固相拡散

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英文摘要
It is widely known that graphene, monolayer graphite sheet, has unique physical properties such as extremely high mobility of carriers and quantized transport phenomena. Graphene has been synthesized mainly through a lab-based primitive method, and deposition method on large area is explored. We examined precipitation of graphene from a solid state metal and found thatamorphous graphite was precipitated through crystalline metal thin film.
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