权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Enlargement of Deposition Area in Heteroepitaxial Growth of Diamond Film by CVD.

CVD 异质外延生长金刚石膜沉积面积的扩大。

基本信息

批准号：
09650781
负责人：
MITSUDA Yoshitaka
金额：
$ 2.5万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650781/
关键词：
DIAMOND THIN FILM CVD EPITAXIAL GROWTH HIGH ORIENTED GROWTH BIAS PRETREATMENT MICROWAVE LARGE AREA DEPOSITION

项目摘要

In this study, we used both NIRIM type and end-launch type microwave plasma CVD apparatus to deposit diamond from gas phase. Our target is to develop the deposition process to fabricate the heteroepitaxial growth of diamond on large Si substrate. For this target, we have investigated the diamond nucleation phenomena, and tried to find out the nucleation control method.At first, using NIRIM-type apparatus, high supersaturation during the initial stage of deposition enhanced the nucleation density on Si substrate by two orders of magnitude. This effect might be dependent on substrate species due to the chemical affinity between carbon atom and substrate element.Using high supersaturation method, we can successfully deposit flat diamond film on BN interlayer at the highest nucleation density 10ィイD110ィエD1cmィイD1-2ィエD1. However, the surface roughened according to deposition time. Therefore, in order to fabricate the flat film, it is necessary to arrange the crystal orientation of nuclei at i … More nitial growth and control the growth orientation by deposition conditions.Next, we developed the end-launch type apparatus, which consisted of Φ120-deposition chamber and Φ100-substrate holder. Using developed apparatus, we can successfully deposit diamond on no-treated Si substrate with high nucleation density by high supersaturation method. Therefore, we confirmed the possibility to deposit diamond film on the whole Φ100-substrate by optimizing the deposition condition.We also tried to arrange the crystal orientation of initial nuclei by the supersaturation method with substrate bias. The enhanced effect of nucleation density was higher by using both the supersaturation and the bias during the initial stage of deposition. We could successfully deposit the epitaxial diamond on Si substrate, although the epitaxial area was limited to small area in substrate.The whole results of this study means that the optimization of deposition conditions make the epitaxial growth of diamond on large Si substrate possible. Less

在这项研究中，我们使用NIRIM型和末端发射型微波等离子体CVD装置从气相中存款金刚石。我们的目标是发展一种在大硅衬底上异质外延生长金刚石的沉积工艺。为此，我们对金刚石成核现象进行了研究，并试图找到控制成核的方法：首先，利用NIRIM型装置，在沉积初期的高过饱和度使Si衬底上的成核密度提高了两个数量级。采用高过饱和度的方法，在BN中间层上成功地沉积了存款平整的金刚石薄膜，最高成核密度为10 μ m D110 μ m D1cm D1-2 μ m D1。然而，根据沉积时间，表面粗糙化。因此，为了制造平坦的膜，需要将核的晶体取向布置在i ...更多信息其次，研制了端射式的装置，该装置由Φ120的沉积室和Φ100的基片保持器组成。利用所研制的装置，我们成功地在未经处理的硅衬底上用高过饱和度方法沉积出高成核密度的存款金刚石。因此，我们通过优化沉积条件，确定了在整个Φ100衬底上存款金刚石薄膜的可能性，并尝试了用衬底偏压过饱和法对初始晶核的晶向进行排列。在沉积初期同时使用过饱和度和偏压对形核密度的增强效果更好。虽然金刚石外延生长的面积很小，但我们还是成功地在Si衬底上存款了金刚石外延生长，这说明通过优化沉积条件，使金刚石在大面积Si衬底上外延生长成为可能。少