Interaction of coimplanted heterogeneous dopants in semiconductor materials investigated using three-dimensional atom probe

在半导体中共注入异质杂质以形成浅结，以实现大规模集成的连续收缩，近年来引起了人们的广泛关注。在这项研究中，共注入的碳和硼原子在硅衬底上的行为被研究。用三维原子探针直接观察到了退火后形成的碳-硼共聚团簇。结合扩展电阻测量得到的载流子浓度分布，发现碳的共注入导致了硼的电活性降低，而碳原子的存在抑制了硼的扩散。为了校准原子探针获得的三维重建图像，采用了原子层沉积法制备的同位素多层膜样品。

Coimplantation of heterogeneous dopants into semiconductors for shallow junction formation has recently been attracting much attention for realizing continuous shrinkage of large-scale integration. In this study, the behavior of coimplanted carbon and boron atoms in silicon substrates is investigated. The carbon-boron coclusters formed by annealing were directly observed by three-dimensional atom probe. In combination with carrier concentration profiles obtained by spreading resistance measurements, it is found that the carbon coimplantation leads to the decrease of boron electrical activation, whereas boron diffusion is suppressed by the presence of carbon atoms. For calibrating the three-dimensional reconstructed images obtained by the atom probe, isotopic multilayer samples fabricated via atomic-layer deposition were employed.