Interaction of coimplanted heterogeneous dopants in semiconductor materials investigated using three-dimensional atom probe

近年来，异质掺杂共注入半导体形成浅结以实现大规模集成电路的连续收缩成为研究热点。在这项研究中，共注入碳和硼原子在硅衬底中的行为进行了研究。用三维原子探针直接观察了退火形成的碳硼共团簇。结合扩展电阻测量获得的载流子浓度分布，发现碳共注入导致硼电激活的减少，而硼扩散被抑制的碳原子的存在。为了校准由原子探针获得的三维重建图像，采用了通过原子层沉积制造的同位素多层样品。

Coimplantation of heterogeneous dopants into semiconductors for shallow junction formation has recently been attracting much attention for realizing continuous shrinkage of large-scale integration. In this study, the behavior of coimplanted carbon and boron atoms in silicon substrates is investigated. The carbon-boron coclusters formed by annealing were directly observed by three-dimensional atom probe. In combination with carrier concentration profiles obtained by spreading resistance measurements, it is found that the carbon coimplantation leads to the decrease of boron electrical activation, whereas boron diffusion is suppressed by the presence of carbon atoms. For calibrating the three-dimensional reconstructed images obtained by the atom probe, isotopic multilayer samples fabricated via atomic-layer deposition were employed.