Fabrication and characterization of novel Heusler-type topological insulator thin films

新型Heusler型拓扑绝缘体薄膜的制备与表征

• 批准号: 24760547
• 负责人: MIYAWAKI Tetsuya
• 金额: $ 2.91万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-24760547/
• 关键词: トポロジカル絶縁体; ホイスラー合金; LaPtBi; エピタキシャル薄膜; 光電子分光

Some half-Heusler alloys were predicted to act as topological insulators (TIs). Thin films of half-Heusler TIs are desired as the surface states are expected to arise by introducing uniaxial lattice distortion which opens a gap at the Fermi energy. Great care should be taken to the order/disorder structures to obtain the expected properties in half-Heusler thin films, since the disorder structures lead significant changes of the valence band electronic structures. In this research, epitaxial half-Heusler LaPtBi thin films with high order parameter were successfully grown on single crystalline substrate. Valence band ultraviolet photoelectron spectra exhibited clear structures that are in good agreement with the calculated band structure of half-Heusler LaPtBi. The sample with high order parameter of 0.94 exhibits the low carrier density and the high mobility. The obtained LaPtBi thin films are potential candidates for applications for topological insulator devices.

一些半-Heusler合金被预测为拓扑绝缘体(TIS)。半Heusler TiS薄膜是理想的薄膜，因为单轴晶格扭曲会导致表面态的出现，从而在费米能级上打开一个能隙。由于有序/无序结构会导致价带电子结构的显著变化，因此在半-Heusler薄膜中要获得预期的性能必须非常注意有序/无序结构。在本研究中，我们成功地在单晶衬底上生长了高阶参数的外延半Heusler LaPtBi薄膜。价带紫外光电子光谱显示了清晰的结构，与计算的半Heusler LaPtBi的能带结构符合得很好。高阶参数为0.94的样品表现出低的载流子密度和高的迁移率。所获得的LaPtBi薄膜具有潜在的拓扑绝缘器件的应用前景。

项目成果

The effect of magnetocrystalline anisotropy on the domain structure of patterned Fe2CrSi Heusler alloy thin films

磁晶各向异性对图案化 Fe2CrSi Heusler 合金薄膜磁畴结构的影响

• DOI: 10.1063/1.4818800
• 发表时间: 2013
• 期刊: J. Appl. Phys.
• 作者: T. Miyawaki;M. Foerster;S. Finizio et al.
• 通讯作者: S. Finizio et al.

Antiferromagnetic Heusler Ru_2MnGe Epitaxial Thin Films Showing Neel Temperature up to 353 K

反铁磁 Heusler Ru_2MnGe 外延薄膜显示尼尔温度高达 353 K

• DOI: 10.1109/tmag.2012.2198874
• 发表时间: 2012
• 期刊: IEEE Transactions on Magnetics
• 影响因子: 2.1
• 作者: N. Fukatani;H. Fujita;T. Miyawaki;K. Ueda;H. Asano
• 通讯作者: H. Asano

Structural and magnetic properties in Heusler-type ferromagnet/antiferromagnet bilayers.

Heusler 型铁磁体/反铁磁体双层的结构和磁性。

• DOI: 10.1063/1.4794133
• 发表时间: 2013
• 期刊: Journal Applied Physics
• 作者: N. Fukatani;K. Inagaki;T. Miyawaki;K. Ueda;H. Asano
• 通讯作者: H. Asano

Structural and electrical properties of (111) oriented half-Heusler LaPtBi thin films

(111)取向半Heusler LaPtBi薄膜的结构和电学性质

• 发表时间: 2012
• 作者: N. Sugimoto;Y. Niimi;T. Miyawaki;T. Yoshihara;N. Fukatani;K. Ueda;N. Tanaka;and H. Asano
• 通讯作者: and H. Asano

Structural and magnetic properties of antiferromagnetic Heusler Ru2MnGe epitaxial thin films

反铁磁Heusler Ru2MnGe外延薄膜的结构和磁性能

• 发表时间: 2012
• 作者: N. Fukatani;H. Fujita;T. Miyawaki;K. Ueda;and H. Asano
• 通讯作者: and H. Asano