Development of novel functionalities using phase copetitions in correlated-electron-oxide heterostructures

我们通过将铁电性与莫特跃迁相结合来开发非易失性器件功能，莫特跃迁通过传统半导体中无法预料的新机制发生在相关电子氧化物中。特别是，我们在晶体管结构中发现了一种非易失性电阻开关，该晶体管结构由具有莫特跃迁的新型相关氧化物和新发现的铁电性组成。观察到的开关（铁电场效应）是该化合物族中最大的。我们通过关注相关氧化物和铁电体之间的界面原子结构揭示了其机理。

We developed non-volatile device functionalities by combining ferroelectricity with Mott transition, which occurs in correlated-electron oxides by novel mechanisms that cannot be expected in conventional semiconductors. Particularly, we found a nonvolatile resistive switching in a transistor structure consisting of a novel correlated oxide with a Mott transition and a newly-found ferroelectric. The observed switching (ferroelectric field effect) was the largest among this compound family. We revealed the mechanism by focusing on an interface atomic structure between the correlated oxide and ferroelectric.