Analytical research on decomposition behavior of metal-organic compounds in supercritical fluids and its application for film-deposition process

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The purpose of this research is to consider the reaction condition for forming metal-oxide deposition from metal-organic precursors under the field of supercritical CO2 fluid (scCO2), as well as its application for processing of thin-film materials.This research revealed that (i) decomposition reaction of the precursors (metal alkoxides or beta-diketonate complexes) could be promoted by simply raising the temperature of scCO2 and/or adding some promoting agents (oxidizers, catalysts, etc.), (b) the solubility of the precursors in scCO2 could be dependent on their ligand structures, and (iii) the film-deposition process under scCO2 condition enabled low-temperature deposition under 300 degree C that yielded metal-oxide thin films such as SiO2, ZrO2, and TiO2 applicable for constructing dielectric capacitors.