Optical absorption spectra of thin film solar cell semiconductors with a composition gradient by a photothermal spectroscopy

光热光谱法测定具有成分梯度的薄膜太阳能电池半导体的光吸收光谱

• 批准号: 25390082
• 负责人: IKARI TETSUO
• 金额: $ 3.24万
• 依托单位: University of Miyazaki
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2013
• 资助国家: 日本
• 起止时间: 2013-04-01 至 2016-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-25390082/
• 关键词: 半導体光物性; 薄膜結晶成長; 無発光電子再結合; 量子構造半導体; カルコパイライト太陽電池; 組成変調構造; 光熱変換分光法; フォトルミネセンス; 光学物性

项目成果

Low-Temperature Photoluminescence of Sb-doped ZnO Nanowires Synthesized on Sb-coated Si Substrate by Chemical Vapor Deposition Method

• DOI: 10.1007/978-81-322-1160-0_16
• 发表时间: 2014
• 作者: K. Sakai;K. Ishikura;A. Fukuyama;I. Palani;M. Rao;T. Okada;T. Ikari

Effect of interatomic distance of constituent nitrogen atoms on its localized electronic state in dilute GaAsN thin films investigated by a photoreflectance spectroscopy

通过光反射光谱研究稀 GaAsN 薄膜中氮原子原子间距离对其局域电子态的影响

• DOI: 10.1016/j.egypro.2014.12.343
• 发表时间: 2014
• 期刊: Energy Procedia
• 作者: Ding;W.;Fukuyama;A.;Morioka;G.;Suzuki;A.;Suzuki;H.;Yamaguchi;M.;Ikari;T.
• 通讯作者: T.

Activation energies for carrier non-radiative recombination in strain-balanced InGaAs/GaAsP MQW solar cell structures

应变平衡 InGaAs/GaAsP MQW 太阳能电池结构中载流子非辐射复合的活化能

• 发表时间: 2014
• 作者: H. Kuradome;T. Ikari;A. Fukuyama;K. Nishioka;T. Aihara;H. Suzuki;H. Fujii;M. Sugiyama;and Y.Nakano
• 通讯作者: and Y.Nakano

Misfit dislocation anisotropies in the InGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping

• DOI: 10.7567/jjap.53.018001
• 发表时间: 2013
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Hidetoshi Suzuki;T. Matsushita;M. Katayama;K. Maeda;T. Ikari

Effect of iodine treatment on residual Na contents and induced crystal strains in guest-free Si clathrate thin films

碘处理对无客体硅笼形薄膜中残余Na含量和诱导晶体应变的影响

• 发表时间: 2015
• 作者: H. Takeshita;K. Sakai;T. Haraguchi;H. Suzuki;F. Ohashi;T. Kume;A. Fukuyama;S. Nonomura;and T. Ikari
• 通讯作者: and T. Ikari