Correlation of geometrical and electronic properties in metallic nanowires
金属纳米线几何和电子特性的相关性
基本信息
- 批准号:5428992
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:德国
- 项目类别:Priority Programmes
- 财政年份:2004
- 资助国家:德国
- 起止时间:2003-12-31 至 2011-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Crystalline metallic nanowires (Ag, Pb) with lateral dimensions below 10 nm down to atomic size, grown epitaxially on silicon substrates, will be studied with respect to correlations of electrical transport and the morpholgy of the wires and their interfaces. The experiments will be carried out using a combined high resolution SEM-STM system, which will be used to produce, characterize, and manipulate metallic nanowires and their surroundings down to the atomic scale. The conductance of the wires and its local variation will be measured by means of titanium silicide contact pads on the substrate and the STM tip as mobile voltage sensor so that the properties of single wires can be studied. By systematic variations of the substrate surface structure (step density, reconstruction via adsorbates) and the growth parameters (deposition rate, temperature, adsorbates) the influence of the wire interface structure and morphology on electrical transport properties will be elucidated. The wire geometry will be manipulated in order to create bottle necks by means of the STM tip and electromigration effects. The effects of single defects like grain boundaries, steps on the vacuum or substrate interface, and adsorbates on electron scattering will be accessed and quantified.
晶体金属纳米线(银,铅)的横向尺寸低于10 nm的原子大小,外延生长在硅衬底上,将研究相对于电输运和形态的线和它们的接口的相关性。这些实验将使用组合的高分辨率SEM-STM系统进行,该系统将用于生产、表征和操纵金属纳米线及其周围环境,直至原子尺度。利用衬底上的硅化钛接触垫和作为移动的电压传感器的STM针尖测量导线的电导及其局部变化,从而可以研究单根导线的特性。通过系统的衬底表面结构的变化(步骤密度,通过吸附物重建)和生长参数(沉积速率,温度,吸附物)的电线接口结构和形态对电输运性质的影响将被阐明。将操纵金属丝几何形状,以便通过STM尖端和电迁移效应产生瓶颈。单个缺陷,如晶界,真空或衬底界面上的台阶,以及吸附物对电子散射的影响将被访问和量化。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Professor Dr. Herbert Pfnür其他文献
Professor Dr. Herbert Pfnür的其他文献
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{{ truncateString('Professor Dr. Herbert Pfnür', 18)}}的其他基金
Low-dimensional electronic magneto-transport in epitaxial ultra-thin Bi and Bi-Sb alloy films: impurities, structure, confinement and disorder.
外延超薄 Bi 和 Bi-Sb 合金薄膜中的低维电子磁输运:杂质、结构、限制和无序。
- 批准号:
254443332 - 财政年份:2014
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Mechanismen des elektronischen Transports in ultradünnen, epitaktischen und stark anisotropen Metallschichten
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