Correlation of geometrical and electronic properties in metallic nanowires

金属纳米线几何和电子特性的相关性

• 批准号: 5428992
• 负责人: Professor Dr. Herbert Pfnür
• 金额: --
• 依托单位: Professur Analytik an Festkörperoberflächen
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2004
• 资助国家: 德国
• 起止时间: 2003-12-31 至 2011-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5428992?language=en
• 关键词: Correlation; geometrical; electronic; properties; metallic

Crystalline metallic nanowires (Ag, Pb) with lateral dimensions below 10 nm down to atomic size, grown epitaxially on silicon substrates, will be studied with respect to correlations of electrical transport and the morpholgy of the wires and their interfaces. The experiments will be carried out using a combined high resolution SEM-STM system, which will be used to produce, characterize, and manipulate metallic nanowires and their surroundings down to the atomic scale. The conductance of the wires and its local variation will be measured by means of titanium silicide contact pads on the substrate and the STM tip as mobile voltage sensor so that the properties of single wires can be studied. By systematic variations of the substrate surface structure (step density, reconstruction via adsorbates) and the growth parameters (deposition rate, temperature, adsorbates) the influence of the wire interface structure and morphology on electrical transport properties will be elucidated. The wire geometry will be manipulated in order to create bottle necks by means of the STM tip and electromigration effects. The effects of single defects like grain boundaries, steps on the vacuum or substrate interface, and adsorbates on electron scattering will be accessed and quantified.

将在电气传输的相关性和电线及其界面的形态相关性方面研究，将研究在10 nm至原子尺寸的侧面尺寸向下至原子尺寸的晶体金属纳米线（Ag，Pb），在硅底物上生长。实验将使用组合的高分辨率SEM-STM系统进行，该系统将用于生产，表征和操纵金属纳米线及其周围环境，直至原子量表。电线及其局部变化的电导将通过基板上的硅酸盐接触板和STM尖端作为移动电压传感器来测量，以便可以研究单线的性能。通过底物表面结构的系统变化（步骤密度，通过吸附物的重建）和生长参数（沉积速率，温度，吸附物），将阐明电线界面结构和形态对电气传输特性的影响。电线几何形状将被操纵，以通过STM尖端和电迁移效应来形成瓶颈。单个缺陷，例如晶界，真空或底物界面的步骤以及吸附物对电子散射的影响。