メゾポーラス材料を使った新しい電子材料の創生とデバイスへの応用

采用溶胶-凝胶法在600oC下制备了厚度约为20 nm的介孔HfO2薄膜，实现了电池用离子(如充电离子电池中的Na+和K+)的离子导电介质。通过直流溅射沉积了一层厚度为10 nm的金属铝膜，使其浸泡在介孔中以控制其导电性。得到的HfO2/Al_2O_3介观结构薄膜具有较好的导电性，足以满足离子传导的偏置要求。同时，在所制备的薄膜中，HfO2/Al复合薄膜在1M KOH电解液中表现出最小的奈奎斯特弧径，电极/电解液界面的阻抗较小，反映了较好的离子扩散和迁移。此外，我们还开发了一种比HfO2或HfO2/Al薄膜更小的漏电流。我们报道了在硅片表面制备多晶Ni-Co PBA薄膜的简单化学路线。表面形成了几种均匀的锥体结构。该薄膜具有顺磁性，有望在分子自旋电子器件中得到应用。与之前报道的PBAS薄膜相比，我们的薄膜没有表现出负磁化。这种方法可以扩展到未来通过形成多层或异质结构的电学应用来展示多铁性薄膜。

Mesoporous HfO2 thin films (around 20 nm thick) were fabricated by sol-gel-based spin-coating process at 600 oC to realize the ion conducting media for the ionics (e.g. Na+ and K+ for rechargeable ion batteries) for battery application.. Another film of aluminum metal (10 nm thick) was deposited by DC sputtering to soak into the mesoporous to control the conductivity. The obtained mesostructured HfO2/Al2O3 films show rather good conductivity which is enough for bias for ion conduction. At the meantime, among all the thin films the mesostructured HfO2/Al2O3 composite thin films showed the smallest Nyquist arc diameter in 1 M KOH electrolyte, implying lower impedance at the electrode/electrolyte interface, reflecting better ions diffusion and movement.Also we have developed a mesostructured HfO2/Al2O3 composite thin films with much reduced leakage current compared to HfO2 or HfO2/Al thin films.We have reported simple chemical route for preparation of polycrystalline Ni-Co PBA thin films on the surface of silicon wafers. Several kinds of homogeneous pyramidal structures formed on the surface. The thin films showed paramagnetic properties which may allow applications of these materials in molecular spintronic devices. Our thin films did not show a negative magnetization compared to the previously reported PBAs thin films. This method could be extended for demonstrating multiferroic thin films by forming the multilayered or heterostructures for electric applications in the future.