メゾポーラス材料を使った新しい電子材料の創生とデバイスへの応用

采用溶胶-凝胶法在600 ℃下制备了介孔HfO 2薄膜（约20 nm厚），以实现电池应用中的离子导电介质（如可充电离子电池的Na+和K+）。通过DC溅射沉积另一层铝金属膜（10 nm厚）以浸入中孔中以控制电导率。所获得的介观结构的HfO 2/Al 2 O3薄膜显示出相当好的导电性，这是足够的离子传导偏压。同时，在所有薄膜中，介观结构的HfO 2/Al 2 O3复合薄膜在1 M KOH电解液中显示出最小的奈奎斯特弧直径，这意味着在电极/电解液界面处的阻抗较低，同时，我们还开发了一种介观结构的HfO_2/Al_2O_3复合薄膜，与HfO_2或HfO_2/Al_2O_3薄膜相比，其漏电流大大降低。我们报道了在硅片表面制备多晶Ni-Co PBA薄膜的简单化学方法。表面形成了多种均匀的金字塔结构。薄膜显示出顺磁性，这可能使这些材料在分子自旋电子器件中的应用。我们的薄膜没有表现出负磁化相比，以前报道的PBAs薄膜。这种方法可以扩展到演示多铁性薄膜，形成多层或异质结构，在未来的电子应用。

Mesoporous HfO2 thin films (around 20 nm thick) were fabricated by sol-gel-based spin-coating process at 600 oC to realize the ion conducting media for the ionics (e.g. Na+ and K+ for rechargeable ion batteries) for battery application.. Another film of aluminum metal (10 nm thick) was deposited by DC sputtering to soak into the mesoporous to control the conductivity. The obtained mesostructured HfO2/Al2O3 films show rather good conductivity which is enough for bias for ion conduction. At the meantime, among all the thin films the mesostructured HfO2/Al2O3 composite thin films showed the smallest Nyquist arc diameter in 1 M KOH electrolyte, implying lower impedance at the electrode/electrolyte interface, reflecting better ions diffusion and movement.Also we have developed a mesostructured HfO2/Al2O3 composite thin films with much reduced leakage current compared to HfO2 or HfO2/Al thin films.We have reported simple chemical route for preparation of polycrystalline Ni-Co PBA thin films on the surface of silicon wafers. Several kinds of homogeneous pyramidal structures formed on the surface. The thin films showed paramagnetic properties which may allow applications of these materials in molecular spintronic devices. Our thin films did not show a negative magnetization compared to the previously reported PBAs thin films. This method could be extended for demonstrating multiferroic thin films by forming the multilayered or heterostructures for electric applications in the future.