In-situ x-ray measurements of defect generation and crystalline quality during PVT growth, cool down and post-growth annealing of SiC

原位 X 射线测量 SiC PVT 生长、冷却和生长后退火过程中的缺陷产生和晶体质量

• 批准号: 5445675
• 负责人: Professor Dr. Rainer Hock
• 金额: --
• 依托单位: Lehrstuhl für Kristallografie und Strukturphysik
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2005
• 资助国家: 德国
• 起止时间: 2004-12-31 至 2010-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5445675?language=en
• 关键词: situ; ray; measurements; defect; generation

The search for growth routes to reduce the defects in PVT grown SiC remains a crucial topic for lange scale production of wafer material with appropriate electronic properties. Because of the extreme conditions needed to grow SiC by the modified Lely technique at temperatures above 2000 °C, crystal growers are essentially "blind" to the evolution of the structural quality during the growth process itself. The same holds true for the cool-down of the crystals, a process step which by its own may have an important influence on the final structural quality of the grown crystals. We propose to monitor the defect generation and development of the crystalline quality from the seed to the final crystal and during cool down to ambient temperature by high-energy x-ray diffraction in-situ. The x-ray experiments will include a study of the influence of post-growth ingot annealing on the structural quality. The main goal of this project is the identification of process parameter regimes such as temperature and material flux where defects in SiC crystals are formed.

寻找减少PVT生长SiC中缺陷的生长路线仍然是大规模生产具有适当电子性能的晶片材料的关键主题。由于通过改进的Lely技术在2000 °C以上的温度下生长SiC所需的极端条件，晶体生长者基本上对生长过程本身期间的结构质量的演变“视而不见”。晶体的冷却也是如此，这是一个工艺步骤，其本身可能对生长晶体的最终结构质量产生重要影响。我们建议监测缺陷的产生和发展的结晶质量从种子到最终的晶体，并在冷却到环境温度的高能X射线衍射原位。X射线实验将包括研究生长后晶锭退火对结构质量的影响。该项目的主要目标是识别工艺参数制度，如温度和材料流量在SiC晶体中形成缺陷。