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Analog devices based on proton control in oxides for future AI hardware

Analog devices based on proton control in oxides for future AI hardware
用于未来人工智能硬件的基于氧化物质子控制的模拟设备
批准号:
17K18869
负责人:
Yajima Takeaki
金额:
$4.08万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Research (Exploratory)
财政年份:
2017
资助国家:
日本
项目状态:
已结题
起止时间:
2017-06-30 至 2019-03-31

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Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
宽禁带氧化物半导体的氢化作为室温和 3D 兼容的电子掺杂技术
DOI: 10.1063/1.5055302
发表时间: 2018
期刊: AIP Advances
影响因子: 1.6
作者: [Yajima T., Oike G., Yamaguchi S., Miyoshi S., Nishimura T., Toriumi A.]
通讯作者: Toriumi A.
Hydrogenation of The Buried Interface as A Stable Nano-Doping Technique to Oxide Semiconductors
埋入界面氢化作为氧化物半导体的稳定纳米掺杂技术
DOI: --
发表时间: 2017
期刊:
影响因子: --
作者: [Takahiro Kitagawa, Mihary Fiderana Ramananarivo, Akihiko Fujii, and Masanori Ozaki, Takeaki Yajima]
通讯作者: Takeaki Yajima
Study on the rate limiting process of the gate-induced phase transition and the speed limit of the phase transition transistor
  • 批准号:
    20H02615
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $11.4万
  • 财政年份:
    2020
  • 负责人:
    Yajima Takeaki
  • 依托单位:
Study on 0.1V electronics using proton in solids
  • 批准号:
    20K20553
  • 项目类别:
    Grant-in-Aid for Challenging Research (Pioneering)
  • 资助金额:
    $16.64万
  • 财政年份:
    2020
  • 负责人:
    Yajima Takeaki
  • 依托单位:
Device physics of low-voltage transistors using gate-induced phase transitions
  • 批准号:
    17H04812
  • 项目类别:
    Grant-in-Aid for Young Scientists (A)
  • 资助金额:
    $15.81万
  • 财政年份:
    2017
  • 负责人:
    Yajima Takeaki
  • 依托单位:
Operation mechanism of VO2-channel Mott transistors and their low-voltage operation
  • 批准号:
    15K17466
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
  • 资助金额:
    $2.58万
  • 财政年份:
    2015
  • 负责人:
    Yajima Takeaki
  • 依托单位:
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