Analog devices based on proton control in oxides for future AI hardware
Analog devices based on proton control in oxides for future AI hardware
批准号:
17K18869
负责人:
Yajima Takeaki
金额:
$4.08万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Research (Exploratory)
财政年份:
2017
资助国家:
日本
项目状态:
已结题
起止时间:
2017-06-30 至 2019-03-31
中文摘要
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英文摘要
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
宽禁带氧化物半导体的氢化作为室温和 3D 兼容的电子掺杂技术
DOI:
10.1063/1.5055302
发表时间:
2018
期刊:
AIP Advances
影响因子:
1.6
作者:
[Yajima T., Oike G., Yamaguchi S., Miyoshi S., Nishimura T., Toriumi A.]
通讯作者:
Toriumi A.
Hydrogenation of The Buried Interface as A Stable Nano-Doping Technique to Oxide Semiconductors
埋入界面氢化作为氧化物半导体的稳定纳米掺杂技术
DOI:
--
发表时间:
2017
期刊:
影响因子:
--
作者:
[Takahiro Kitagawa, Mihary Fiderana Ramananarivo, Akihiko Fujii, and Masanori Ozaki, Takeaki Yajima]
通讯作者:
Takeaki Yajima
Study on the rate limiting process of the gate-induced phase transition and the speed limit of the phase transition transistor
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批准号:20H02615
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.4万
-
财政年份:2020
-
负责人:Yajima Takeaki
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依托单位:
Study on 0.1V electronics using proton in solids
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批准号:20K20553
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项目类别:Grant-in-Aid for Challenging Research (Pioneering)
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资助金额:$16.64万
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财政年份:2020
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负责人:Yajima Takeaki
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依托单位:
Device physics of low-voltage transistors using gate-induced phase transitions
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批准号:17H04812
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项目类别:Grant-in-Aid for Young Scientists (A)
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资助金额:$15.81万
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财政年份:2017
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负责人:Yajima Takeaki
-
依托单位:
Operation mechanism of VO2-channel Mott transistors and their low-voltage operation
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批准号:15K17466
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.58万
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财政年份:2015
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负责人:Yajima Takeaki
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依托单位:
海外基金