Controlling Defects in 2D Materials for Advanced Optoelectronics

对2D过渡金属硫属化物膜中的缺陷密度的控制允许货车德瓦尔斯异质结构和其它超薄电子器件的受控制造。这对于控制器件的光电性质是至关重要的，然而，与体半导体不同，2D过渡金属硫属化物中的缺陷和掺杂剂控制目前是不可能的。本项目旨在研究单缺陷的光学特性，以及如何使用灵敏的显微镜和受控配体沉积来控制它们。将研究制造的薄膜晶体管中的同时电子特性和单缺陷显微镜，以关联薄膜器件的光学和电子特性。

Control over defect densities in 2D transition metal chalcogenide films permit controlled fabrication of van der Waals heterostructures and other ultra-thin electronic devices. This is crucial for controlling the optoelectronic properties of devices, yet, unlike bulk semiconductors, defect and dopant control in 2D transition metal chalcogenides is not presently possible. This project aims to investigate the optical properties of single-defects, and how to control them using sensitive microscopy and controlled ligand deposition. Simultaneous electronic characterisation and single-defect microscopy in fabricated thin-film transistors will be investigated to correlate optical and electronic properties of thin-film devices.