Controlling Defects in 2D Materials for Advanced Optoelectronics

点击翻译按钮获取中文摘要

Control over defect densities in 2D transition metal chalcogenide films permit controlled fabrication of van der Waals heterostructures and other ultra-thin electronic devices. This is crucial for controlling the optoelectronic properties of devices, yet, unlike bulk semiconductors, defect and dopant control in 2D transition metal chalcogenides is not presently possible. This project aims to investigate the optical properties of single-defects, and how to control them using sensitive microscopy and controlled ligand deposition. Simultaneous electronic characterisation and single-defect microscopy in fabricated thin-film transistors will be investigated to correlate optical and electronic properties of thin-film devices.