Controlling Defects in 2D Materials for Advanced Optoelectronics

控制先进光电器件二维材料中的缺陷

• 批准号: DE150100118
• 负责人: Dr Anthony Morfa
• 金额: --
• 依托单位: RMIT University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Early Career Researcher Award
• 财政年份: 2015
• 资助国家: 澳大利亚
• 起止时间: 2015-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DE150100118
• 关键词: Controlling; Defects; 2D; Materials; Advanced

Control over defect densities in 2D transition metal chalcogenide films permit controlled fabrication of van der Waals heterostructures and other ultra-thin electronic devices. This is crucial for controlling the optoelectronic properties of devices, yet, unlike bulk semiconductors, defect and dopant control in 2D transition metal chalcogenides is not presently possible. This project aims to investigate the optical properties of single-defects, and how to control them using sensitive microscopy and controlled ligand deposition. Simultaneous electronic characterisation and single-defect microscopy in fabricated thin-film transistors will be investigated to correlate optical and electronic properties of thin-film devices.

控制二维过渡金属硫属化物薄膜中的缺陷密度可以控制范德华异质结构和其他超薄电子器件的制造。这对于控制器件的光电特性至关重要，然而，与体半导体不同，二维过渡金属硫属化物中的缺陷和掺杂剂控制目前是不可能的。该项目旨在研究单一缺陷的光学特性，以及如何使用灵敏的显微镜和受控配体沉积来控制它们。将研究制造的薄膜晶体管中的同步电子表征和单缺陷显微镜，以关联薄膜器件的光学和电子特性。