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IMMERSION COOLING OF MICROELECTRONIC CHIP WITH MICROCONFIGURED SURFACE

微结构表面微电子芯片的浸没式冷却

基本信息

批准号：
09650247
负责人：
TAKAMATSU Hiroshi
金额：
$ 1.54万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650247/
关键词：
Pool Boiling Silicon Chip FC-72 Boiling Incipience Critical Heat Flux Heat Transfer Enhancement Reentrant Cavity Microconfigured Surface 電子機器の冷却 FC-72 高濡れ性液体

项目摘要

Although the recent developments of CMOS technology has resulted in a considerable decrease in the chip-level heat dissipation rate, it is obvious that the heat dissipation rate will increase again to a high level as the packaging density and switching speed of the electronic devices increase. Direct immersion cooling of electronic devices by use of dielectric liquids has been a promising method because of its high cooling potential. However, this is not in practical use mainly due to a high wall superheat required for boiling incipience associated with the use of dielectric liquids with a high wettability.In the present reasearch, boiling heat transfer of FC-72 from newly developed treated surfaces with micro-reentrant cavities was studied experimentally. The surface structure was fabricated on a silicon chip by use of microelectronic fabrication techniques. Several kinds of treated surfaces with the combinations of three cavity mouth diameters (1.6 IOTAm, 3 mum and 9 mum) and two num … More ber densities of the micro-reentrant cavities (8I 1/cm^2 and 96CHI 10^3 1/cm^2) were tested along with a smooth surface. Experiments were conducted at the liquid subcoolings of 3 K and 25 K with degassed and gas-dissolved FC-72. The results were as follows :(1)While the wall superheat at boiling incipience was strongly dependent on the dissolved gas content, it was little affected by the cavity mouth diameter and the liquid subcooling.(2)For the degassed FC-72, the boiling incipience superheat was generally higher than the prediction of the heterogeneous nucleation theory which assumed the force balance of an embryonic bubble at the cavity mouth. This suggest that even the reentrant cavity with small mouth such as 1.6 mum is inactive for the liquid with high wettability.(3)The heat transfer performance of the silicon chip with micro-reentrant cavities was considerably improved over the smooth chip.(4)The heat transfer performance of the gas-dissolved FC-72 was higher than that of the degassed FC-72. Less

虽然近年来CMOS技术的发展导致芯片级散热率大幅下降，但随着电子器件封装密度和开关速度的提高，显然散热率将再次提高到较高水平。由于其高冷却潜力，使用介电液体直接浸没式冷却电子设备一直是一种有前途的方法。然而，这并没有在实际中使用，主要是因为与使用具有高润湿性的介电液体相关的沸腾起始所需的高壁过热度。在本研究中，通过实验研究了FC-72从新开发的具有微凹腔的处理表面的沸腾传热。利用微电子制造技术在硅芯片上制造表面结构。对具有三种腔口直径（1.6 IOTAm、3 mum 和 9 mum）和两种微重入腔的光纤密度（8I 1/cm^2 和 96CHI 10^3 1/cm^2）组合的几种处理表面以及光滑表面进行了测试。使用脱气且气体溶解的 FC-72 在 3 K 和 25 K 的液体过冷度下进行实验。研究结果如下：(1)虽然初始沸腾壁面过热度与溶解气体含量有很大关系，但受腔口直径和液体过冷度的影响很小。(2)对于脱气的FC-72，沸腾初始过热度普遍高于异相成核理论的预测，该理论假设腔口处胚胎气泡力平衡。这表明即使是1.6μm这样的小口凹腔对于高润湿性的液体也是不活跃的。(3)具有微凹腔的硅片的传热性能比光滑芯片有显着提高。(4)气溶FC-72的传热性能高于脱气FC-72。较少的