Forming Mechanism of Metal Oxide Thin Films by Liquid Phase Deposition Method

点击翻译按钮获取中文摘要

The forming mechanism of a metal oxide thin film by the liquid phase deposition methods was investigated. Based on the study on the preparation method of the titanium oxide thin film, we tried to monitor the growth process of the thin film on the quartz crystal by QCM method. The deposition rate of the thin film depend on the concentration of fluoro-metal complex and boric acid and the equilibrium reaction of the fluoro-metal complex contributed the film formation reaction. According to in situ AFM and in situ surface charge measurement during the induction period of the deposition, a nucleation of the oxide was observed on the substrate. We obtained VO_x thin films and found that the charge of vanadium ion in the film was controlled by the heating process after deposition. The obtained V_2O_5 film in the air flow intercalated Li^+ ions and the electrochromism phenomenon of the vanadium ion was observed. The VO_2 thin film was obtained in N_2 gas flow. The semiconductor-metal transition of the VO_2 thin film was observed at ca 70。C.We obtained FeOOH and Fe_2O_3 thin films. Also, we succeeded in the preparation of the rare-earth containing metal oxide thin films using the EDTA rare-earth complex in order to avoid the precipitation of the rare-earth fluoride.