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Analysis of the Local Bonding Structure in Silicon Nitride (Oxide) Films Deposited by Plasma-Enhanced CVD in Terms of a Charge-Transfer Model

根据电荷转移模型分析等离子体增强 CVD 沉积的氮化硅（氧化物）薄膜的局部键合结构

基本信息

批准号：
05650009
负责人：
HASEGAWA Seiichi
金额：
$ 1.34万
依托单位：
Kanazawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

项目摘要

Silicon nitride (SiN_x : H) and Si oxide (SiO_x : H) films are deposited using a plasma-enhanced CVD method, and the vibrational properties, the film stress, and the structure of defects are investigated as a function of the deposition conditions. The results might be summarized as :1) In Si nitride films with a near-stoichiometric composition, the films satisfying all of the low stress, the high break-down strength, and the low etching rate can be obtained as they were deposited under conditions of both high H dilution ratio and high rf power supply. An improvement in properties of the films as insulators can be connected with a change in the local bonding structure : when the density of Si-NH-Si bonds relative to that of N-Si_3 bonds decreases, high quality films can be obtained.2) The oscillator strength for the SiH stretching absorption is a function of the effective charge of the SiH dipole, and the values of the effective charge can be calculated using a charge-transfer model combined with the random bonding model. The calculated values of the oscillator strength for SiN_x : H and SiO_x : H films were in excellent agreement with their experimental values. The frequencies of the SiN and SiO stretching absorption are mainly dominated by the bond length and the bond angle for these bonds. It has been shown that the values of these bond length and bond angle can also connected with the sum of the partial charge on the Si and the N or O atoms.3) The frequency of the SiH bending absorption in SiO_x : H flms, which occur in the range of 500-900 cm^<-1>, was analyzed using a molecular-orbital calculation (MOC) method. Further, the dependence of the electron spin resonance spectra as a function of the film composition, arising from Si dangling bonds, was also analyzed on the basis of the MOC.

氮化硅（SiN_x：用等离子体增强化学气相沉积法（PECVD）制备了Si（H）和Si氧化物（SiO_x：H）薄膜，研究了薄膜的振动特性、薄膜应力和缺陷结构随沉积条件的变化。结果表明：（1）在高氢稀释比和高射频电源条件下，近化学计量比的氮化硅薄膜可以同时满足低应力、高击穿强度和低刻蚀速率的要求。作为绝缘体的膜的性能的改善可以与局部键合结构的改变相关联：当Si-NH-Si键密度相对于N-Si_3键密度降低时，可以得到高质量的薄膜。2）SiH伸缩吸收的振子强度是SiH偶极子有效电荷的函数，有效电荷的值可以使用与随机键合模型相结合的电荷转移模型来计算。SiN_x：H和SiO_x：H薄膜的振子强度的计算值与实验值符合得很好。SiN和SiO伸缩吸收的频率主要由键长和键角决定。结果表明，这些键长和键角的大小也与Si和N或O原子上的部分电荷之和有关。3）用分子轨道计算（MOC）方法分析了SiO_x：H薄膜中SiH弯曲吸收的频率，这些频率出现在500-900 cm ~ 2范围<-1>内。此外，电子自旋共振谱的依赖性作为膜的组成的函数，所产生的Si悬挂键，也进行了分析的基础上的MOC。