Design of room temperature spintronics nanodevices: Investigations of buried interfaces by Spin Polarized Hard X-ray photoemission

室温自旋电子学纳米器件的设计：通过自旋偏振硬 X 射线光发射研究埋入界面

• 批准号: 96283636
• 负责人: Professorin Dr. Claudia Felser
• 金额: --
• 依托单位: Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2008
• 资助国家: 德国
• 起止时间: 2007-12-31 至 2011-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/96283636?language=en
• 关键词: Design; room; temperature; spintronics; nanodevices

Scientists from Japan and Germany, experts in the field of spintronics of novel complex materials with high spin polarization propose a joint research project to develop new nanoelectronic devices for room temperature spintronics application. The proposal takes advantage of synergy in a combined research effort in the fields of materials design (Felser, Mainz) advanced characterization methods (Kobayashi, NIMS; Schönhense, Mainz) and device fabrication (Inomata, NIMS, Yamamoto, Hokkaido Univ.). Bilateral cooperations between the German and the Japanese groups are established (see joint references). For the design of new room temperature spintronics devices we have to go beyond the bilateral cooperations. The interfaces of the spintronics devices between different materials are the challenge and have to be strongly improved. In the proposed research project we like to investigate interfaces of devices for spintronics by recently developed HArd Xray Photo Emission Spectroscopy (HAXPES). The method enables us to investigate the electronic structure of a whole device especially of the interface by photoelectron spectroscopy on a nanometer scale. Additionally we like to develop SPIN polarized high resolution HArd Xray Photo Emission Spectroscopy (SPINHAXPES) at SPring8, a new method world wide. All proposers have a joint longterm project at SPring8 starting from the 1.04.2008. This proposal guarantees measurement time at the synchrotron for the planned research project. The Japanese project partners have developed an end station at the BLM47XU, which is the HAXPES Beamline of the National Institute for Materials Science (NIMS).

来自日本和德国的科学家，高自旋极化新型复杂材料自旋电子学领域的专家，提出了一项联合研究项目，以开发用于室温自旋电子学应用的新型纳米电子器件。该提案利用了材料设计（Felser，美因茨）、先进表征方法（Kobayashi， NIMS; Schönhense，美因茨）和器件制造（Inomata， NIMS, Yamamoto，北海道大学）领域联合研究工作的协同作用。德国和日本集团之间建立了双边合作（见联合参考资料）。对于新的室温自旋电子器件的设计，我们必须超越双边合作。自旋电子学器件在不同材料之间的接口是一个挑战，必须大力改进。在本研究计划中，我们希望利用最新发展的硬x射线光发射光谱（HAXPES）来研究自旋电子学器件的界面。该方法使我们能够在纳米尺度上用光电子能谱研究整个器件的电子结构，特别是界面的电子结构。此外，我们希望在SPring8上开发自旋偏振高分辨率硬x射线光发射光谱（SPINHAXPES），这是一种世界范围内的新方法。从2008年4月1日开始，所有提案人在SPring8有一个联合的长期项目。该方案保证了计划研究项目在同步加速器上的测量时间。日本项目合作伙伴已经在BLM47XU上开发了一个终端站，这是国家材料科学研究所（NIMS）的HAXPES光束线。