Design of room temperature spintronics nanodevices: Investigations of buried interfaces by Spin Polarized Hard X-ray photoemission

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Scientists from Japan and Germany, experts in the field of spintronics of novel complex materials with high spin polarization propose a joint research project to develop new nanoelectronic devices for room temperature spintronics application. The proposal takes advantage of synergy in a combined research effort in the fields of materials design (Felser, Mainz) advanced characterization methods (Kobayashi, NIMS; Schönhense, Mainz) and device fabrication (Inomata, NIMS, Yamamoto, Hokkaido Univ.). Bilateral cooperations between the German and the Japanese groups are established (see joint references). For the design of new room temperature spintronics devices we have to go beyond the bilateral cooperations. The interfaces of the spintronics devices between different materials are the challenge and have to be strongly improved. In the proposed research project we like to investigate interfaces of devices for spintronics by recently developed HArd Xray Photo Emission Spectroscopy (HAXPES). The method enables us to investigate the electronic structure of a whole device especially of the interface by photoelectron spectroscopy on a nanometer scale. Additionally we like to develop SPIN polarized high resolution HArd Xray Photo Emission Spectroscopy (SPINHAXPES) at SPring8, a new method world wide. All proposers have a joint longterm project at SPring8 starting from the 1.04.2008. This proposal guarantees measurement time at the synchrotron for the planned research project. The Japanese project partners have developed an end station at the BLM47XU, which is the HAXPES Beamline of the National Institute for Materials Science (NIMS).