Heusler compounds for future magnetic memory and logic

用于未来磁存储器和逻辑的赫斯勒化合物

• 批准号: 263669276
• 负责人: Professorin Dr. Claudia Felser
• 金额: --
• 依托单位: Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2017-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/263669276?language=en
• 关键词: Heusler; compounds; future; magnetic; memory

The HeuMem team exploits the exceptionally versatile magnetic Heusler compounds and matching tunnel barriers to lay the ground for extremely small, fast and power saving devices that could enable visionary IT-concepts such as normally-off/instant-on computing, magnetic logic and more generally ultra-low power green electronics. Theory and experiment target at a unique set of properties to enhance the functionality of magnetic tunnel junctions. These building blocks of spintronics need material systems combining low magnetic saturation and damping with high perpendicular anisotropy and spin polarization to enable easy Spin-Transfer-Torque switching, high data stability, large readout signal and fast read/write cycles. HeuMem addresses key bottlenecks of future memories and logic such as non-volatility, scalability, and fJ energy consumption. It will impact both basic science by advancing the engineering of such complex material systems, as well as concepts for future electronics.

HeuMem团队利用非常通用的磁性Heusler化合物和匹配的隧道屏障，为极小、快速和省电的设备奠定了基础，这些设备可以实现有远见的it概念，如正常关闭/立即打开的计算、磁性逻辑以及更普遍的超低功耗绿色电子产品。理论和实验的目标是一套独特的性质，以提高磁隧道结的功能。这些自旋电子学的构建模块需要结合低磁饱和和阻尼、高垂直各向异性和自旋极化的材料系统，以实现轻松的自旋-传递-扭矩切换、高数据稳定性、大读出信号和快速读/写周期。HeuMem解决了未来存储器和逻辑的关键瓶颈，如非易失性、可扩展性和fJ能耗。它将通过推进这种复杂材料系统的工程来影响基础科学，以及未来电子学的概念。

项目成果

Separation of the two-magnon scattering contribution to damping for the determination of the spin mixing conductance

• DOI: 10.1103/physrevb.98.214439
• 发表时间: 2018-12-26
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Conca, A.;Keller, S.;Hillebrands, B.
• 通讯作者: Hillebrands, B.

Lack of correlation between the spin-mixing conductance and the inverse spin Hall effect generated voltages in CoFeB/Pt and CoFeB/Ta bilayers

• DOI: 10.1103/physrevb.95.174426
• 发表时间: 2017-05-18
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Conca, A.;Heinz, B.;Hillebrands, B.
• 通讯作者: Hillebrands, B.

Large magnetocrystalline anisotropy in tetragonally distorted Heuslers: a systematic study

• DOI: 10.1088/1361-6463/aa5441
• 发表时间: 2017-02
• 期刊: Journal of Physics D: Applied Physics
• 作者: Y. Matsushita;Y. Matsushita;G. Madjarova;G. Madjarova;J. K. Dewhurst;S. Shallcross;C. Felser;Sangeeta Sharma;Sangeeta Sharma;E. Gross

Chemical disorder as an engineering tool for spin polarization in Mn3Ga-based Heusler systems

• DOI: 10.1103/physrevb.91.094203
• 发表时间: 2014-11
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: S. Chadov;S. W. D'Souza;Lukas Wollmann;J. Kiss;G. Fecher;C. Felser

Titanium nitride as a seed layer for Heusler compounds

氮化钛作为赫斯勒化合物的种子层

• DOI: 10.1063/1.4938388
• 发表时间: 2015
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Alessia Niesen;Manuel Glas;Jana Ludwig;Jan-Michael Schmalhorst;Roshnee Sahoo;Daniel Ebke;Elke Arenholz;Günter Reiss
• 通讯作者: Günter Reiss