Thin films of Heusler compounds with high Spin-Orbit Coupling

该项目将新的半导体Heusler化合物的设计与新的传输现象相结合。我们的目标是设计新的材料，可用于横向自旋传输的设备和实现这样的设备。新磁阻器件的材料基于半金属Heusler化合物与新的半导体Heusler化合物的结合。半金属和半导体赫斯勒薄膜的结合将使纯自旋电流成为可能。对于横向自旋输运，具有大自旋扩散长度的材料是必不可少的。扩散长度预计将在赫斯勒化合物提供一个带隙在费米能和具有低自旋轨道耦合大。随着微型化的不断发展，非局域效应在下一代器件中将变得重要。最后的目标将是证明自旋累积效应在横向器件使用新材料。

This project combines the design of new semiconducting Heusler compounds with new transport phenomena. The goal is to design new materials usable in devices for lateral spin transport and the realization of such devices. The materials for new magneto resistive devices are based on half metallic Heusler compounds combined with new semiconducting Heusler compounds. The combination of half metallic and semiconducting Heusler films will render a pure spin current possible. For lateral spin transport, materials with a large spin diffusion length are essential. The diffusion length is expected to be large in Heusler compounds providing a band gap at the Fermi energy and possessing a low spin orbit coupling. With ever increasing miniaturization non-local effects will become important in next generation devices. The final aim will be to demonstrate spin accumulation effects in lateral devices using new materials.