Thin films of Heusler compounds with high Spin-Orbit Coupling

该项目将新型半导体豪斯勒化合物的设计与新的传输现象相结合。其目标是设计可用于横向自旋输运装置的新材料，并实现此类装置。新的磁阻器件的材料是基于半金属的Heusler化合物和新的半导体Heusler化合物。半金属和半导体Heusler薄膜的结合将使纯自旋电流成为可能。对于横向自旋输运，具有较大自旋扩散长度的材料是必不可少的。在Heusler化合物中，扩散长度预计很大，在费米能级提供带隙，并具有低自旋轨道耦合。随着小型化程度的不断提高，非局域效应在下一代器件中将变得越来越重要。最终目标将是展示使用新材料的横向设备中的自旋累积效应。

This project combines the design of new semiconducting Heusler compounds with new transport phenomena. The goal is to design new materials usable in devices for lateral spin transport and the realization of such devices. The materials for new magneto resistive devices are based on half metallic Heusler compounds combined with new semiconducting Heusler compounds. The combination of half metallic and semiconducting Heusler films will render a pure spin current possible. For lateral spin transport, materials with a large spin diffusion length are essential. The diffusion length is expected to be large in Heusler compounds providing a band gap at the Fermi energy and possessing a low spin orbit coupling. With ever increasing miniaturization non-local effects will become important in next generation devices. The final aim will be to demonstrate spin accumulation effects in lateral devices using new materials.