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Process Modeling of Anisotropic Chemical Etching of Silicon

硅各向异性化学蚀刻的过程建模

基本信息

批准号：
10044149
负责人：
SATO Kazuo
金额：
$ 1.98万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

We investigated orientation-dependent anisotropic etching of single-crystal silicon. The group of Nagoya University measured etching rates of silicon using alkaline solutions such as potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) water solutions. They evaluated the orientation dependence in the etching rate for a number of crystallographic orientations under wide ranges of etching conditions in temperature and etchant concentrations.The group of the Univ. of Twente and the Univ. of Nijmegen tried to describe such orientation dependence using a limited number of physical parameters, which used to be used in crystal growth that is the reverse process of etching. They introduced 9 parameters, and by fitting those values to experimental data provided from Nagoya Univ., they succeeded in describing etching rates within an error of 5% for one etching condition using KOH water solution. The results were presented in two international conferences, and will be published in Sensors and Actuators : A. It is our future work to describe orientation dependence for a wide range of etching conditions, because the orientation dependence significantly varies according to the conditions.The group of LAAS/CNRS simulated the etching process in atomic scale using Monte Carlo method based on a model, which considers weakening of silicon back-bonds according to the increase in the number of OH attached to the silicon surface-atom. The simulated orientation dependence was similar to that of the experimental results of TMAH rather than KOH both measured by Nagoya Univ.We organized a workshop focused on silicon anisotropic etching. The first workshop was held in 1998 in Holten, the Netherlands, and going to be held in 2000 in Toulouse, France. We are planning the third in 2002 in Japan.

我们研究了单晶硅的取向相关各向异性腐蚀。名古屋大学的研究小组使用诸如氢氧化钾（KOH）和氢氧化四甲铵（TMAH）水溶液的碱性溶液测量硅的蚀刻速率。在温度和蚀刻剂浓度的大范围蚀刻条件下，对多个晶体取向的蚀刻速度的取向依赖性进行了评价。特文特大学和奈梅亨大学的研究小组试图用与蚀刻相反的晶体生长中使用的有限的物理参数来描述这种取向依赖性。他们引入了9个参数，并通过将这些值与名古屋大学提供的实验数据拟合，对于使用KOH水溶液的一种蚀刻条件，他们成功地描述了误差在5%以内的蚀刻速率。研究结果在两个国际会议上发表，并将发表在《传感器和执行器：A.由于取向依赖性随条件的变化而显著不同，因此我们未来的工作是描述各种蚀刻条件下的取向依赖性。LAAS/CNRS小组基于一个模型，采用Monte Carlo方法在原子尺度上模拟了蚀刻过程，该模型考虑了根据附着在硅表面原子上的OH数量的增加而削弱硅背键的情况。模拟的取向依赖性与名古屋大学测量的TMAH而不是KOH的实验结果相似。我们组织了一个专注于硅各向异性蚀刻的研讨会。第一次讲习班于1998年在荷兰霍尔滕举行，并将于2000年在法国图卢兹举行。我们计划于2002年在日本举办第三届。