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Characterization of mechanical properties of MEMS materials

MEMS 材料机械性能表征

基本信息

批准号：
10305008
负责人：
SATO Kazuo
金额：
$ 23.1万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10305008/
关键词：
micromachine thin films mechanical properties tensile testing MEMS single-crystal silicon size effect fatigue 試験法シリコン化合物

项目摘要

(1) We developed a new type of tensile testing method to characterize thin films utilized as structural materials for MEMS.In the proposed "on-chip tensile testing method", test is carried out on a silicon chip containing a loading mechanism and a tensile specimen on a same chip. The developed system allows both quasi-static and dynamic fatigue testing.(2) We designed and fabricated test chips for different film materials such as (a) single crystal silicon in three different orientations, (b) SiO2, (c) Si3N4, (d) poly-crystalline silicon. We obtained fracture stress and strain, and Young's modulus of above-mentioned materials.(3) Single crystal silicon showed 5% elastic strain until fracture. This is much higher than values obtained from bulk silicon by bending test. We also observed a size-effect of the specimen on fracture strain. Smaller specimen showed larger fracture strain though both are tested by on-chip method.(4) Cyclic loading influenced on the fracture of single crystal silicon. Number of cycles when silicon fractured decreased according to the increase in applied peak value of strain. The fracture mechanism is under discussion.(5) Crack growth of the silicon specimen was observed in-situ by using a carbon-nano-tube attached on an AFM probe tip. From a change in crack profile, it was suggested plastic deformation might be introduced to the specimen. This is against the common knowledge that silicon does not show any plasticity at room temperature. Further investigation is needed.(6) We succeeded in tensile test for Si3N4 film 0.1 micron thick. We further designed a test system allowing a tensile test for films 0.01 micron thick. We expect a surface effect appear on the film property by decreasing the thickness.

(1)提出了一种新型的MEMS薄膜拉伸测试方法--“片上拉伸测试方法”，即在一个含有加载机构的硅片上进行拉伸测试，并在同一硅片上放置拉伸试样。所开发的系统允许准静态和动态疲劳测试。(2)我们针对不同的薄膜材料设计和制造了测试芯片，例如（a）三种不同取向的单晶硅，（B）SiO2，（c）Si 3 N4，（d）多晶硅。得到了上述材料的断裂应力、断裂应变和杨氏模量。(3)单晶硅在断裂前表现出5%的弹性应变。这比通过弯曲测试从体硅获得的值高得多。我们还观察到的尺寸效应的试样上的断裂应变。尽管两者都是用片上方法测试的，但较小的试样显示出较大的断裂应变。(4)循环载荷对单晶硅断裂的影响。硅断裂的循环次数随着施加峰值应变的增加而减少。断裂机制正在讨论中。(5)利用原子力显微镜（AFM）探针针尖上的碳纳米管对硅试样的裂纹生长进行了原位观察。从裂纹轮廓的变化，这表明塑性变形可能会引入到试样。这与硅在室温下不显示任何塑性的常识相悖。需要进一步调查。(6)我们成功地对0.1微米厚的Si_3N_4薄膜进行了拉伸试验。我们进一步设计了一个测试系统，允许拉伸测试0.01微米厚的膜。我们预期薄膜厚度的减少会对薄膜的性能产生表面效应。