ALEGRO: Atomic Layer Deposition and Etching for GaN Power Device Applications

ALEGRO：用于 GaN 功率器件应用的原子层沉积和蚀刻

• 批准号: 103445
• 金额: $ 33.91万
• 依托单位: OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=103445
• 关键词: ALEGRO; Atomic; Layer; Deposition; Etching

Electric cars and electric power delivery need efficient electrical switching devices. Semiconductor devices can do this, but also waste some energy when switching. This project plans to demonstrate high voltage switching devices using gallium nitride (GaN), the most significant semiconductor material after silicon, in a novel device format which can operate more efficiently and switch faster than the current device hybrids based on compound semiconductors combined with silicon. Making such devices will require almost atomic precision in etching and depositing layers. The project will further develop atomic layer etching (ALE) and atomic layer deposition (ALD) tools and processes ready for the manufacture of such devices. Oxford Instruments brings its experience as a process tool manufacturer for plasma-enhanced ALD, and its recent innovation in ALE, and will develop these tools and processes. The University of Glasgow will use its expertise in device design and manufacture to demonstrate a process flow for device manufacture.

电动汽车和电力输送需要高效的电气开关装置。半导体器件可以做到这一点，但在开关时也会浪费一些能量。该项目计划展示使用氮化镓（GaN）的高压开关器件，氮化镓是继硅之后最重要的半导体材料，采用一种新的器件形式，可以比目前基于化合物半导体与硅结合的器件混合体更有效地运行和更快地切换。制造这样的器件将需要几乎原子级的蚀刻和沉积精度。该项目将进一步开发原子层蚀刻（ALE）和原子层沉积（ALD）工具和工艺，为制造此类器件做好准备。Oxford Instruments将带来其作为等离子体增强ALD工艺工具制造商的经验，以及其最近在ALE方面的创新，并将开发这些工具和工艺。格拉斯哥大学将利用其在器械设计和制造方面的专业知识来证明器械制造的工艺流程。