COSMOS (COmplementary Semiconductor using thin-film Metal-Oxide Systems)
COSMOS (COmplementary Semiconductor using thin-film Metal-Oxide Systems)
批准号:
132201
负责人:
金额:
$14.13万
依托单位国家:
英国
项目类别:
Feasibility Studies
财政年份:
2016
资助国家:
英国
项目状态:
已结题
起止时间:
2016 至 --
中文摘要
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英文摘要
Flexible electronics is a key enabler for embedded systems to deliver the Internet-of-Things, where sensors andactuators embedded in physical objects are connected to the Internet. Objects which can both sense theirenvironment and communicate, provide important new data which can be used to respond, e.g. to protecttemperature-sensitive goods, report a fault, track goods through supply-chain. One of the key enabling factorsfor the IoT is the convergence of emerging electronics (flexible, low-cost and simple) with conventionalelectronics (complex, rigid and expensive). In order to maximise the opportunity for flexible ICs, it is necessaryto develop CMOS circuits, which use both n-type and p-type semiconductors. This project will investigate thefeasibility of integrating a p-type oxide material into an existing NMOS process, in order to produce CMOScircuits and the viability of manufacturing scale-up.roject Summary
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