Novel photo-resist material for next generation micro-chips

用于下一代微芯片的新型光刻胶材料

基本信息

批准号：
133245
负责人：
金额：
$ 58.66万
依托单位：
IRRESISTIBLE MATERIALS LTD
依托单位国家：
英国
项目类别：
Feasibility Studies
财政年份：
2017
资助国家：
英国
起止时间：
2017 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=133245
关键词：
Novel photo resist material next

项目摘要

"Irresistible Materials (IM) is developing next generation photo-resist materials for the semiconductor industry. A photo-resist is used within the manufacturing process of microchips. It acts as a type of mask that enables patterns to be etched into silicon through a process known as lithography. It is these features etched into silicon that act as the 'wires' of the modern day microchip.Resists are thus critical to the semiconductor industry, and the ever-decreasing size of microelectronics is possible only through continuous advancements in lithography and resist technologies.However, current lithography technology, where the radiation used is 193nm wavelength light, is reaching its limit, and is unable to meet industry targets past 2018 (the wavelength is too large for the targeted microchip feature sizes). To address this, a new generation of lithography technology is planned for commercial introduction in 2019, called Extreme Ultraviolet Lithography (EUV).In EUV lithography, the wavelength of the radiation is reduced to 13.5nm enabling higher resolution patterns, and thus smaller micro-chip features. However, there is presently no resist solution that meets industry targets for the planned introduction of EUV in 2019\. This creates a major need and opportunity within the semiconductor industry. Through this project, IM will develop a patented EUV resist material to directly addresses this need and opportunity."

"Irresistible Materials (IM) is developing next generation photo-resist materials for the semiconductor industry. A photo-resist is used within the manufacturing process of microchips. It acts as a type of mask that enables patterns to be etched into silicon through a process known as lithography. It is these features etched into silicon that act as the 'wires' of the modern day microchip.Resists are thus critical to the semiconductor行业和微电子的不断增长只有通过光刻和抵抗技术的持续发展才有可能。但是，当前所使用的辐射的当前光刻技术是193nm波长的限制，它达到了其限制，并且无法实现2018年的行业介绍（用于启动的技术范围），以实现目标的启动。在2019年，被称为极端紫外线光刻（EUV）。在EUV光刻，辐射的波长减小到13.5nm，实现了更高的分辨率模式，从而降低了较小的微芯片特征。但是，目前尚无抗拒解决方案符合计划在2019年推出EUV的行业目标。这在半导体行业中创造了主要的需求和机会。通过这个项目，IM将开发一种专利的EUV抵抗材料，以直接解决这一需求和机会。”