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Novel photo-resist material for next generation micro-chips

Novel photo-resist material for next generation micro-chips
用于下一代微芯片的新型光刻胶材料
批准号:
133245
负责人:
金额:
$58.66万
依托单位:
依托单位国家:
英国
项目类别:
Feasibility Studies
财政年份:
2017
资助国家:
英国
项目状态:
已结题
起止时间:
2017 至 --

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中文摘要
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英文摘要
"Irresistible Materials (IM) is developing next generation photo-resist materials for the semiconductor industry. A photo-resist is used within the manufacturing process of microchips. It acts as a type of mask that enables patterns to be etched into silicon through a process known as lithography. It is these features etched into silicon that act as the 'wires' of the modern day microchip.Resists are thus critical to the semiconductor industry, and the ever-decreasing size of microelectronics is possible only through continuous advancements in lithography and resist technologies.However, current lithography technology, where the radiation used is 193nm wavelength light, is reaching its limit, and is unable to meet industry targets past 2018 (the wavelength is too large for the targeted microchip feature sizes). To address this, a new generation of lithography technology is planned for commercial introduction in 2019, called Extreme Ultraviolet Lithography (EUV).In EUV lithography, the wavelength of the radiation is reduced to 13.5nm enabling higher resolution patterns, and thus smaller micro-chip features. However, there is presently no resist solution that meets industry targets for the planned introduction of EUV in 2019\. This creates a major need and opportunity within the semiconductor industry. Through this project, IM will develop a patented EUV resist material to directly addresses this need and opportunity."
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