Novel photo-resist material for next generation micro-chips

“Irrigible Materials（IM）正在为半导体行业开发下一代光刻胶材料。光刻胶用于微芯片的制造过程中。它充当一种掩模，使图案能够通过称为光刻的工艺蚀刻到硅中。正是这些蚀刻在硅中的特征充当了现代微芯片的“导线”。因此，抗蚀剂对半导体工业至关重要，只有通过光刻和抗蚀剂技术的不断进步，微电子器件的尺寸才有可能不断减小。然而，目前的光刻技术，其中使用的辐射是193 nm波长的光，正在达到其极限，并且不能满足2018年以后的工业目标（波长对于目标微芯片特征尺寸来说太大）。为了解决这一问题，计划在2019年将新一代光刻技术商业化引入，称为极紫外光刻（EUV）。在EUV光刻中，辐射的波长降低到13.5nm，从而实现更高分辨率的图案，从而实现更小的微芯片特征。然而，目前还没有抗蚀剂解决方案能够满足2019年计划引入EUV的行业目标。这在半导体行业中创造了一个重大的需求和机会。通过这个项目，IM将开发一种专利EUV抗蚀剂材料，以直接满足这一需求和机会。"

"Irresistible Materials (IM) is developing next generation photo-resist materials for the semiconductor industry. A photo-resist is used within the manufacturing process of microchips. It acts as a type of mask that enables patterns to be etched into silicon through a process known as lithography. It is these features etched into silicon that act as the 'wires' of the modern day microchip.Resists are thus critical to the semiconductor industry, and the ever-decreasing size of microelectronics is possible only through continuous advancements in lithography and resist technologies.However, current lithography technology, where the radiation used is 193nm wavelength light, is reaching its limit, and is unable to meet industry targets past 2018 (the wavelength is too large for the targeted microchip feature sizes). To address this, a new generation of lithography technology is planned for commercial introduction in 2019, called Extreme Ultraviolet Lithography (EUV).In EUV lithography, the wavelength of the radiation is reduced to 13.5nm enabling higher resolution patterns, and thus smaller micro-chip features. However, there is presently no resist solution that meets industry targets for the planned introduction of EUV in 2019\. This creates a major need and opportunity within the semiconductor industry. Through this project, IM will develop a patented EUV resist material to directly addresses this need and opportunity."