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Photo-resist. Stripping. Technology. by. Gas-liquid. mixture. for. Highly-efficient. Ultra-short-time. Semiconductor. Manufacturing

光刻胶。

基本信息

批准号：
13555084
负责人：
SUGAWA Shigetoshi
金额：
$ 8.19万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

项目摘要

High-performance and ultra-low power consumption PDAs as a degital-network-communication tool is strongly required in the grobal-network-information society. In such tool, large-scale integrated system which can catch up with changing cutstomer needs day by day is essencial, and therefore ultra-short-time semiconductor manufacturing is required. In this study, ultra-short-time and highly efficient photo-resist stripping technology which can drastically improve semiconductor manufacturing efficiency is established.AT first, we have developed a experimental equipment, featuring the ability to hange a injection speed, injection quantity, injection pressure of gas-liquid mixture, substrate movement speed, inozzle movement speed an so on. With this equipment, we have optimized such parameters and obtained that the photo-resiston 8 inch wafer can be stripped only in one minute, nevertheless the arsenic ions implantation (10E16 atoms/cm2) have been taken to the photo-resisit, which cannot be stripped easily even if O2 plasma ashing Followed by the chemical cleaning with the 4:1 mixture of 98% H2SO4 and 30% H2O2 have been done.Moreover, in order to shorten the processing time, we have imvestiated the pre-treatment process Followed by the treatment by the gas-liquid mixture. As a result, we have obtained that the O3-added ultrapure-water treatment with pH control by CO2 addition can effectively remove the photo-resist.As mentioned above, we have established the foundation for the short-time photo-resist stripping technology for highly efficient and ultra-short-time semiconductor manufacturing.

全球网络信息社会迫切需要高性能、超低功耗的PDA作为数字网络通信工具。在这样的工具中，需要一个能够跟上日益变化的客户需求的大规模集成系统，因此需要超短时间的半导体制造。本研究建立了能够大幅提高半导体制造效率的超短时间、高效光刻胶剥离技术。首先，研制了一套能够改变注塑速度、注入量、气液混合物注塑压力、衬底移动速度、喷嘴移动速度等参数的实验装置。利用该设备对光致抗蚀剂的参数进行了优化，得到光致抗蚀剂8英寸晶片仅需1分钟即可剥离，而砷离子注入(10E16个原子/厘米~2)被注入到光致抗蚀剂上，即使进行O2等离子体灰化，再用98%H_2SO_4和30%H_2O_2 4：1的混合物进行化学清洗，也不容易被剥离。此外，为了缩短处理时间，我们改进了前处理工艺，然后用气液混合物进行处理。实验结果表明，添加臭氧的超纯水加入CO2控制pH值可以有效去除光致抗蚀剂，为高效超短时半导体制造的短时光致抗蚀剂剥离技术奠定了基础。