Swift heavy ion induced nano-porous antimony-based semiconductors

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This project aims to study the fabrication and application of nano-porous antimony based semiconductors prepared by high-energy ion irradiation. Using a unique combination of synchrotron and laboratory- based analytical techniques as well as computer simulations, the project expects to identify the physical mechanisms for porous structure formation and exploit the materials for application in thermoelectric and thermo-photovoltaic devices. Expected outcomes of the project include fabrication processes compatible with current device fabrication methodologies that should enable rapid integration of the materials into advanced device applications. Significant benefits should result from novel applications of the technologies such as energy harvesting and sensor devices.