Swift heavy ion induced nano-porous antimony-based semiconductors

Swift重离子诱导纳米多孔锑基半导体

• 批准号: DP190100200
• 负责人: Prof Patrick Kluth
• 金额: $ 28.07万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2019
• 资助国家: 澳大利亚
• 起止时间: 2019-03-18 至 2024-03-17
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP190100200
• 关键词: Swift; heavy; ion; induced; nano

This project aims to study the fabrication and application of nano-porous antimony based semiconductors prepared by high-energy ion irradiation. Using a unique combination of synchrotron and laboratory- based analytical techniques as well as computer simulations, the project expects to identify the physical mechanisms for porous structure formation and exploit the materials for application in thermoelectric and thermo-photovoltaic devices. Expected outcomes of the project include fabrication processes compatible with current device fabrication methodologies that should enable rapid integration of the materials into advanced device applications. Significant benefits should result from novel applications of the technologies such as energy harvesting and sensor devices.

本课题旨在研究高能离子辐照制备纳米多孔锑基半导体材料的制备及应用。利用同步加速器和基于实验室的分析技术以及计算机模拟的独特组合，该项目预计将确定多孔结构形成的物理机制，并开发用于热电和热光伏器件的材料。该项目的预期结果包括与当前设备制造方法兼容的制造工艺，这应该能够将材料快速集成到先进的设备应用中。能源收集和传感器设备等新技术的应用将带来显著的效益。