Probing the properties of amorphous semiconductors with swift heavy ion irradiation and synchrotron radiation

用快速重离子辐照和同步加速器辐射探测非晶半导体的特性

• 批准号: DP0987233
• 负责人: Prof Mark Ridgway
• 金额: $ 30.16万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2009
• 资助国家: 澳大利亚
• 起止时间: 2009-01-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0987233
• 关键词: Probing; properties; amorphous; semiconductors; swift

This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy ion irradiation of amorphous semiconductors to probe fundamental materials properties. Our results and accompanying scientific insight will broaden the applicability of amorphous semiconductors in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilise the Australian Synchrotron.

该提案与研究重点3：建设和改造澳大利亚产业的前沿技术和优先目标：突破性科学，前沿技术和先进材料相一致。 我们试图推导和理解的过程中运作的快速重离子辐照的非晶半导体探测基本材料的属性。 我们的研究结果和随之而来的科学见解将扩大非晶半导体在先进技术中的适用性，增强国家研究概况，增加国内知识基础，并培养出训练有素的年轻科学家，以利用澳大利亚同步加速器。