Amorphous-Phase Formation and Structure in Semiconductor Substrates following Swift Heavy-Ion Irradiation

快速重离子辐照后半导体基底中非晶相的形成和结构

• 批准号: DP0665592
• 负责人: Prof Mark Ridgway
• 金额: $ 27.68万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2006
• 资助国家: 澳大利亚
• 起止时间: 2006-01-01 至 2009-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0665592
• 关键词: Amorphous; Phase; Formation; Structure; Semiconductor

This proposal is consistent with Research Priority 3: Frontier Technologies for Building and Transforming Australian Industries and the Priority Goals: Breakthrough Science, Frontier Technologies and Advanced Materials. We seek to deduce and understand the processes operative during swift heavy-ion irradiation of elemental and binary semiconductor substrates and identify and measure the resulting amorphous-phase structure. Our results and accompanying scientific insight will broaden the applicability of these materials in advanced technologies, enhance the national research profile, increase the domestic knowledge base and yield skilled, young scientists trained to utilize the Australian Synchrotron when commissioned in 2007.

该提案与研究重点3：建设和改造澳大利亚产业的前沿技术和优先目标：突破性科学，前沿技术和先进材料相一致。 我们试图推导和理解的过程中快速重离子辐照元素和二元半导体衬底和识别和测量所产生的非晶相结构。 我们的研究结果和随之而来的科学见解将扩大这些材料在先进技术中的适用性，提高国家研究水平，增加国内知识基础，并培养出训练有素的年轻科学家，以便在2007年投入使用澳大利亚同步加速器。