Electrically Pumped Broad Band and Vertical Cavity Semiconductor Dilute Nitride Amplifiers for Metro and Acess Networks

如今，光纤通信被用于世界各地的语音、数据和视频传输。随着行业接入部分对宽带服务的需求不断增加，网络运营商在提供更高带宽方面面临越来越大的挑战，因为客户通常不准备为这些服务支付比目前高得多的费用。因此，需要具有成本效益和管理良好的城域网，这些城域网必须有足够的容量和灵活性来应对未来的需求。对于未来的光城域和接入网来说，开发价格便宜、性能良好的1.3微米波长的可靠组件至关重要，这些组件可以在光纤上传输高带宽。这种网络对成本非常敏感，因为一些组件只服务于一个客户，而不是像跨洋电缆那样由大量用户共享。因此，迫切需要能够以低成本和高带宽提供所需功能的光学元件。在这种情况下，基于稀氮化物（GaInNAs/GaAs）系统的组件预计将比使用更传统的GaInAs/InP系统的设备提供显着优势。特别是波长范围为1.3 - 1.55微米的gainna的宽增益谱使其特别适合用于平面半导体光放大器，而在GaAs上生长和与GaAs/AlGaAs dbr的集成方面对于垂直腔器件的应用具有吸引力。这一领域的初步工作已经取得了成功，展示了具有良好光输出和快速调制速度的边缘发射激光器和垂直腔表面发射激光器（VCSELs）。目前的提案旨在进一步开发稀氮化物的器件潜力，重点关注两个特定光子器件的设计和特性：边缘发射宽带半导体光放大器（BBSOA）和电泵浦垂直腔半导体光放大器（VCSOA）。埃塞克斯和布里斯托尔之间的联合提案将是富有成效的，具有成本效益的和广泛的，涵盖了1.3微米通信窗口中不同城域和接入应用的vcsoa和bbsoa。

Optical fibre communications are used for transmission of voice, data and video throughout the world today. As the demand for broadband services in the access segment of the industry continues to increase, network operators face increased challenges to deliver higher bandwidths since customers are often not prepared to pay significantly more than at present for these services. Cost-effective, well-managed metropolitan networks are therefore required that have sufficient capacity and flexibility to respond to future demand. For future optical metro and access networks it is essential to develop cheap, reliable components with good performance at the wavelength of 1.3 micron that allows transmission of high bandwidths over fibre. Such networks are very cost-sensitive, since some components serve just one customer instead of being shared by large numbers of users as in, for example, a trans-oceanic cable. There is therefore a pressing need for optical components that can offer the required functionality at low cost with high bandwidth. In this context, components based on the dilute nitride (GaInNAs/GaAs) system are predicted to offer significant advantages over devices using the more conventional GaInAs/InP system. In particular the broad gain spectrum of GaInNAs in the wavelength range 1.3 - 1.55 micron makes it especially suitable for use in planar semiconductor optical amplifiers, whilst the aspects of growth on GaAs and integration with GaAs/AlGaAs DBRs are attractive for applications in vertical-cavity devices. Initial work in this area has been successful, with the demonstration of edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs) with good light output and fast modulation speed. The current proposal seeks to further exploit the device potential of dilute nitrides by focussing on the design and characterization of two specific photonic devices: an edge emitting broad band semiconductor optical amplifier (BBSOA) and an electrically pumped vertical cavity semiconductor optical amplifier (VCSOA). This joint proposal between Essex and Bristol will be productive, cost-effective and wide-ranging, covering both VCSOAs and BBSOAs for different metro and access applications in the 1.3 micron communications window.