Advanced discretisation strategies for atomistic nano CMOS simulation
Advanced discretisation strategies for atomistic nano CMOS simulation
批准号:
EP/G069352/1
负责人:
Stephane Bordas
金额:
$13.19万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2010
资助国家:
英国
项目状态:
已结题
起止时间:
2010 至 --
中文摘要
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英文摘要
Vision: The idea of this proof-of-concept research is to investigatehow recent revolutionary advances in computational mechanics can beleveraged to enhance the modelling of nano complementarymetal-oxide-semiconductor (CMOS).The size of the CMOS devices is aggressively being reduced into thedeca-nanometer range (one hundredth of a micron). It isprojected that mass-produced metal-oxide-semiconductor field-effecttransistors (MOSFETs) will reach gate lengths as small as 7 nanometersby 2018 (2003 edition of the International Technology Roadmap forSemiconductors).Modelling and simulation provides deep insight into the operation ofmodern semiconductor devices and circuits, and dramatically reducesthe development costs and time-to-market.Modelling devices at the deca-nanometer scale face significantdifficulties associated with the statistical variability from onetransistor to another introduced by the granularity of matter at thisscale. The Device Modelling Group (Asen Asenov) in the ElectricalEngineering Department at Glasgow University is the world leader inCMOS variability simulation developing unique computational tools tailored tofacilitate the design the next generation of nano-CMOS.While these techniques are very well suited to simulate the effects ofdiscrete dopants, they involve an unnecessary computational cost byrequiring large numbers of grid points when simulating line edge andinterface roughness. It would be greatly beneficial for the practical use simulations of CMOS atthe nano-scale if this computational cost could be reduced.Stephane Bordas, from the Mechanics and Materials Group of the CivilEngineering Department at Glasgow University has developed efficientnumerical techniques which have the potential to significantlydecrease the computational burden through enrichment of the numericalscheme with a priori knowledge about the solution and by allowing theuse of low quality discretisations without sacrificing accuracy.This proof-of-concept research will investigate how the novelnumerical techniques devised in Bordas' group in the context ofmechanics problems can be generalised to increase the accuracy versuscomputational cost ratio in nano-scale CMOS simulators.
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IUTAM Symposium on Multi-Functional Material Structures and Systems
IUTAM 多功能材料结构与系统研讨会
DOI:
10.1007/978-90-481-3771-8_30
发表时间:
2010
期刊:
影响因子:
--
作者:
[Natarajan S]
通讯作者:
Natarajan S
DOI:
10.1016/j.cma.2010.10.009
发表时间:
2011-01-15
期刊:
Computer methods in applied mechanics and engineering
影响因子:
7.2
作者:
[Kerfriden P, Gosselet P, Adhikari S, Bordas S]
通讯作者:
Bordas S
DOI:
10.1002/nme.2798
发表时间:
2010-07
期刊:
International Journal for Numerical Methods in Engineering
影响因子:
2.9
作者:
[S. Natarajan;D. Mahapatra;S. Bordas]
通讯作者:
S. Natarajan;D. Mahapatra;S. Bordas
Bridging Proper Orthogonal Decomposition methods and augmented Newton-Krylov algorithms: an adaptive model order reduction for highly nonlinear mechanical problems
连接适当正交分解方法和增强牛顿-克雷洛夫算法:针对高度非线性机械问题的自适应模型降阶
DOI:
10.48550/arxiv.1109.4795
发表时间:
2011
期刊:
影响因子:
--
作者:
[Kerfriden P]
通讯作者:
Kerfriden P
DOI:
10.1016/j.commatsci.2010.11.014
发表时间:
2011
期刊:
Computational Materials Science
影响因子:
3.3
作者:
[A. Menk;S. Bordas]
通讯作者:
A. Menk;S. Bordas
共 9 条
Increased Reliability for Industrially Relevant Automatic Crack Growth Simulation with the eXtended Finite Element Method
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批准号:EP/G042705/1
-
项目类别:Research Grant
-
资助金额:$58.52万
-
财政年份:2010
-
负责人:Stephane Bordas
-
依托单位:
Sustainable domain-specific software generation tools for extremely parallel particle-based simulations
-
批准号:EP/I006494/1
-
项目类别:Research Grant
-
资助金额:$3.26万
-
财政年份:2010
-
负责人:Stephane Bordas
-
依托单位:
海外基金