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Advanced discretisation strategies for atomistic nano CMOS simulation

用于原子纳米 CMOS 模拟的先进离散化策略

基本信息

批准号：
EP/G069352/1
负责人：
Stephane Bordas
金额：
$ 13.19万
依托单位：
CARDIFF UNIVERSITY
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2010
资助国家：
英国
起止时间：
2010 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FG069352%2F1
关键词：
Advanced discretisation strategies atomistic nano

项目摘要

Vision: The idea of this proof-of-concept research is to investigatehow recent revolutionary advances in computational mechanics can beleveraged to enhance the modelling of nano complementarymetal-oxide-semiconductor (CMOS).The size of the CMOS devices is aggressively being reduced into thedeca-nanometer range (one hundredth of a micron). It isprojected that mass-produced metal-oxide-semiconductor field-effecttransistors (MOSFETs) will reach gate lengths as small as 7 nanometersby 2018 (2003 edition of the International Technology Roadmap forSemiconductors).Modelling and simulation provides deep insight into the operation ofmodern semiconductor devices and circuits, and dramatically reducesthe development costs and time-to-market.Modelling devices at the deca-nanometer scale face significantdifficulties associated with the statistical variability from onetransistor to another introduced by the granularity of matter at thisscale. The Device Modelling Group (Asen Asenov) in the ElectricalEngineering Department at Glasgow University is the world leader inCMOS variability simulation developing unique computational tools tailored tofacilitate the design the next generation of nano-CMOS.While these techniques are very well suited to simulate the effects ofdiscrete dopants, they involve an unnecessary computational cost byrequiring large numbers of grid points when simulating line edge andinterface roughness. It would be greatly beneficial for the practical use simulations of CMOS atthe nano-scale if this computational cost could be reduced.Stephane Bordas, from the Mechanics and Materials Group of the CivilEngineering Department at Glasgow University has developed efficientnumerical techniques which have the potential to significantlydecrease the computational burden through enrichment of the numericalscheme with a priori knowledge about the solution and by allowing theuse of low quality discretisations without sacrificing accuracy.This proof-of-concept research will investigate how the novelnumerical techniques devised in Bordas' group in the context ofmechanics problems can be generalised to increase the accuracy versuscomputational cost ratio in nano-scale CMOS simulators.

愿景：这项概念验证研究的目的是研究如何利用计算力学方面的最新革命性进展来增强纳米互补金属氧化物半导体 (CMOS) 的建模。CMOS 器件的尺寸正在积极缩小到十纳米范围（百分之一微米）。预计到 2018 年，大规模生产的金属氧化物半导体场效应晶体管 (MOSFET) 的栅极长度将达到小至 7 纳米（2003 年版国际半导体技术路线图）。建模和仿真可深入了解现代半导体器件和电路的运行，并大幅降低开发成本和成本。十纳米尺度的器件建模面临着重大困难，这些困难与晶体管之间的统计变异性有关，这种变异性是由该尺度的物质粒度引起的。格拉斯哥大学电气工程系的器件建模小组 (Asen Asenov) 是 CMOS 可变性模拟领域的世界领先者，致力于开发独特的计算工具，以促进下一代纳米 CMOS 的设计。虽然这些技术非常适合模拟离散掺杂剂的影响，但在模拟线边缘和界面时需要大量网格点，因此会产生不必要的计算成本。粗糙度。如果能够降低这种计算成本，这对于纳米级 CMOS 的实际使用模拟将大有裨益。格拉斯哥大学土木工程系力学和材料组的 Stephane Bordas 开发了高效的数值技术，通过利用有关解决方案的先验知识丰富数值方案并允许使用低计算量，有可能显着减少计算负担。这项概念验证研究将研究如何推广 Bordas 小组在力学问题背景下设计的新颖数值技术，以提高纳米级 CMOS 模拟器的精度与计算成本比。