Active Sensor Structures for Extreme Environments

适用于极端环境的有源传感器结构

• 批准号: EP/I037660/1
• 负责人: Alton Horsfall
• 金额: $ 60.51万
• 依托单位: Newcastle University
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2011
• 资助国家: 英国
• 起止时间: 2011 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FI037660%2F1
• 关键词: Active; Sensor; Structures; Extreme; Environments

Gas sensors that can operate under extreme conditions are an essential underpinning technology in the battle against climate change, the future deployment of nuclear technology and a whole raft of scientific applications. This project will develop the technology required to realise these sensors and demonstrate their applicability in representative hostile environments. The deliverables will directly benefit UK society by allowing the cost-effective measurement of gas concentrations in locations which are inaccessible using current technology; such as nuclear installations, extra terrestrial planets, active volcanoes and exhaust gases in automotive or aerospace applications. By developing devices fabricated using silicon carbide technology, we intend to demonstrate gas sensing arrays, which will offer the ability to discriminate between the components of a mixture of gases and can operate under extreme conditions (for example in temperatures beyond 600C and high radiation flux). These sensor arrays will also be combined with monolithically fabricated amplifier structures to increase the signal to noise ratio and hence allow the detection of lower concentrations. Such technology will allow closed loop control for the first time of many industrial and utility technologies - increasing efficiency and safety.

可以在极端条件下工作的气体传感器是应对气候变化、未来核技术部署和一系列科学应用的重要基础技术。该项目将开发实现这些传感器所需的技术，并展示其在代表性敌对环境中的适用性。这些交付成果将使英国社会直接受益，因为它允许在使用当前技术无法到达的地点进行具有成本效益的气体浓度测量;例如核设施，地外行星，活火山和汽车或航空航天应用中的废气。通过开发使用碳化硅技术制造的设备，我们打算展示气体传感阵列，它将提供区分气体混合物成分的能力，并可以在极端条件下工作（例如在超过600 ℃的温度和高辐射通量）。这些传感器阵列还将与单片制造的放大器结构相结合，以增加信噪比，从而允许检测较低的浓度。这种技术将首次允许许多工业和公用事业技术的闭环控制-提高效率和安全性。

项目成果

4H-SiC VJFETs with Self-Aligned Contacts

具有自对准触点的 4H-SiC VJFET

• DOI: 10.4028/www.scientific.net/msf.821-823.793
• 发表时间: 2015
• 期刊: Materials Science Forum
• 作者: Zekentes K

Characterisation of Interfaces in 4H-SiC high-K MOS Structures

4H-SiC 高 K MOS 结构中的界面表征

• 作者: Roy, S.K.

Silicon carbide based instrumentation amplifiers for extreme applications

适用于极端应用的碳化硅仪表放大器

• DOI: 10.1109/icsens.2015.7370504
• 发表时间: 2015
• 作者: Chan H

SiC gas sensor arrays for extreme environments

适用于极端环境的 SiC 气体传感器阵列

• 发表时间: 2013
• 作者: Roy, S.K.

Silicon nitride encapsulation to preserve ohmic contacts characteristics in high temperature oxygen rich environments

氮化硅封装可在高温富氧环境中保持欧姆接触特性

• 作者: Roy, S.K.