Phase transitions in vanadium oxide nanostructures
氧化钒纳米结构的相变
基本信息
- 批准号:EP/J009504/1
- 负责人:
- 金额:$ 0.9万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2011
- 资助国家:英国
- 起止时间:2011 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Vanadium dioxide, VO2, undergoes a transition from an insulating phase to a metallic state when it is heated above a critical temperature Tc of 68C. The precise mechanisms underlying this transformation remain controversial, primarly because coupling between local strain and Tc makes it very challenging to infer the true (microscopic) properties of the material from macroscopic measurements that average over a large volume.A new way to study this problem has been pioneered by Prof. David Cobden at the University of Washington in Seattle, by using VO2 'nanobeams', smaller than the characteristic domain size. However all the results to date have been obtained using optical microscopy and electrical measurements of nanobeams suspended between contacts. The expertise at Warwick, in electron microscopy, provides an opportunity to study the domain boundary between the insulating and metallic phases in unprecedented detail, with the aim of answering long-standing problems and new questions arising from Prof. Cobden's work. A short programme of research is in place for the summer of 2011, and this travel grant will provide an opportunity to develop proposals for future research, enabling us to sustain this new collaboration.
当二氧化钒(VO 2)被加热到68 C的临界温度Tc以上时,它会从绝缘相转变为金属态。这种转变背后的确切机制仍然存在争议,主要是因为局部应变和Tc之间的耦合使得推断真实的在西雅图的华盛顿大学的大卫科布登教授开创了一种研究这个问题的新方法,通过使用VO2“纳米束”,小于特征域尺寸。然而,迄今为止,所有的结果都是使用光学显微镜和电测量悬浮在触点之间的纳米梁获得的。在沃里克,在电子显微镜的专业知识,提供了一个机会,以前所未有的细节研究绝缘和金属相之间的域边界,以回答长期存在的问题和从教授Cobden的工作产生的新问题的目的。2011年夏季将实施一项短期研究计划,这笔旅费赠款将为制定未来研究提案提供机会,使我们能够维持这种新的合作。
项目成果
期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Richard Beanland其他文献
Interfacial oxides for charge control of hafnium oxide surface passivation of silicon
用于硅的氧化铪表面钝化电荷控制的界面氧化物
- DOI:
10.1016/j.solmat.2025.113439 - 发表时间:
2025-04-01 - 期刊:
- 影响因子:6.300
- 作者:
Sophie L. Pain;Luke Wilkins;Anup Yadav;Yisong Han;Richard Beanland;Nicholas E. Grant;John D. Murphy - 通讯作者:
John D. Murphy
An ultra high-endurance memristor using back-end-of-line amorphous SiC
- DOI:
10.1038/s41598-024-64499-2 - 发表时间:
2024-06-18 - 期刊:
- 影响因子:3.900
- 作者:
Omesh Kapur;Dongkai Guo;Jamie Reynolds;Daniel Newbrook;Yisong Han;Richard Beanland;Liudi Jiang;C. H. Kees de Groot;Ruomeng Huang - 通讯作者:
Ruomeng Huang
Blocking of indium incorporation by antimony in III–V-Sb nanostructures
III-V-Sb 纳米结构中锑阻止铟的掺入
- DOI:
- 发表时间:
2010 - 期刊:
- 影响因子:3.5
- 作者:
Ana M. Sanchez;Ana M. Sanchez;Ana M. Beltrán;Richard Beanland;Teresa Ben;Mhairi Gass;F. D. L. Peña;Michael Walls;Alfonso G. Taboada;J. M. Ripalda;Sergio I. Molina - 通讯作者:
Sergio I. Molina
Ferroelastic writing of crystal directions in oxide thin films
氧化物薄膜中晶体取向的铁弹性写入
- DOI:
10.1038/s41565-025-01950-z - 发表时间:
2025-06-05 - 期刊:
- 影响因子:34.900
- 作者:
Wei Peng;Wenjie Meng;Younji Kim;Jiyong Yoon;Liang Si;Kesen Zhao;Shuai Dong;Yubin Hou;Chuanying Xi;Li Pi;Aditya Singh;Ana M. Sanchez;Richard Beanland;Tae Won Noh;Qingyou Lu;Daesu Lee;Marin Alexe - 通讯作者:
Marin Alexe
Richard Beanland的其他文献
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{{ truncateString('Richard Beanland', 18)}}的其他基金
Electrodeposited 2D Transition Metal Dichalcogenides on graphene: a novel route towards scalable flexible electronics
石墨烯上电沉积二维过渡金属二硫化物:实现可扩展柔性电子产品的新途径
- 批准号:
EP/V062603/1 - 财政年份:2022
- 资助金额:
$ 0.9万 - 项目类别:
Research Grant
New directions in high temperature dielectrics: unlocking performance of doped tungsten bronze oxides through mechanistic understanding
高温电介质的新方向:通过机理理解解锁掺杂钨青铜氧化物的性能
- 批准号:
EP/V053701/1 - 财政年份:2021
- 资助金额:
$ 0.9万 - 项目类别:
Research Grant
Silicon based QD light sources and lasers
硅基 QD 光源和激光器
- 批准号:
EP/J013048/1 - 财政年份:2012
- 资助金额:
$ 0.9万 - 项目类别:
Research Grant
Digital Precession Electron Diffraction
数字进动电子衍射
- 批准号:
EP/J009229/1 - 财政年份:2012
- 资助金额:
$ 0.9万 - 项目类别:
Research Grant
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