Silicon based QD light sources and lasers
硅基 QD 光源和激光器
基本信息
- 批准号:EP/J012815/1
- 负责人:
- 金额:$ 88.99万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2012
- 资助国家:英国
- 起止时间:2012 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Realising efficient electrically-pumped lasers based on Si substrates is the transformative step that enables the unification of III-V based communications technology with Si data processing and memory electronics. We will demonstrate that high performance light emitting devices can be fabricated on Si substrates using an approach based on quantum dots (QDs). The successful outcome will provide the basis for cheaper and better Si-based optoelectronic integrated circuits, a key enabler for the Digital Economy, and provide potential solutions for the impending Si CMOS interconnect challenges (where the physical length and energy requirements of the connections between electronic elements limits processing performance). This project is expected to contribute to improving quality of life for consumers and to wealth creation, for example low-cost and increased complexity Si chips for next-generation computers and higher-capacity communication systems.The problems we will address include the very different crystal lattice size, and the different temperature dependence of the lattice size, of Silicon (the basis for most electronics) and the majority of III-V semiconductors (the basis for most light emitting devices) and the low device power consumption requirements for densely integrated components. The research will investigate how to manage the lattice mismatch across the silicon to III-V interface, introduce methods to filter out crystal defects that originate from this region of the device and will use an active layer that is relatively intolerant to any remaining defects generated by this interface. We will investigate how to make devices that require small numbers of electrons and devices that lose a very small number of the photons generated by these electrons using, for example, a wide range of materials such as GaInP for the laser cladding for low optical loss and InGaAsN(Sb) to allow quantum mechanical tunnelling into a small number of lasing states hence minimising electron use. This will make the overall devices very energy efficient which is also necessary to avoid the generation of large amounts of waste heat that is difficult (and energy costly) to dissipate.We will also demonstrate that it is possible to manufacture laser mirrors and waveguides to couple light between the laser and other optical devices, for example amplifiers. We will liase with leading UK based companies that are ideally placed to exploit the immediate outcomes of our work and also interact with other academic groups, where further research is necessary before our advances can be fully exploited. One example is an optical imaging technique that will benefit from increased data acquisition speed, enhanced portability and reduced price of the devices we will produce to allow early diagnosis of, for example, skin cancer or retinal diseases causing blindness.
在硅衬底上实现高效的电泵浦激光器是实现基于III-V的通信技术与硅数据处理和存储电子设备的统一的变革性步骤。我们将展示一种基于量子点的方法可以在硅衬底上制造高性能的发光器件。这一成功的结果将为更便宜、更好的硅基光电集成电路奠定基础,这是数字经济的关键推动因素,并为即将到来的硅CMOS互连挑战(其中电子元件之间的连接的物理长度和能量要求限制了处理性能)提供潜在的解决方案。该项目预计将有助于提高消费者的生活质量和创造财富,例如用于下一代计算机和更高容量通信系统的低成本和更复杂的硅芯片。我们将解决的问题包括硅(大多数电子产品的基础)和大多数III-V半导体(大多数发光设备的基础)的晶格大小非常不同,以及晶格大小与温度的不同关系,以及密集集成组件的低设备功耗要求。这项研究将研究如何管理硅到III-V界面上的晶格失配,引入过滤来自器件这一区域的晶体缺陷的方法,并将使用相对不能容忍由该界面产生的任何剩余缺陷的有源层。我们将研究如何制造需要少量电子的器件和失去这些电子产生的非常少量光子的器件,例如,使用多种材料,如用于低光学损耗的激光熔覆的GaInP和允许量子力学隧穿进入少量激光状态的InGaAsN(Sb),从而最大限度地减少电子的使用。这将使整个设备的能源效率非常高,这也是避免产生大量难以消散(且能源昂贵)的废热所必需的。我们还将展示制造激光反射镜和波导在激光和其他光学设备(如放大器)之间耦合光的可能性。我们将与总部设在英国的领先公司建立联系,这些公司处于利用我们工作的直接结果的理想位置,并与其他学术团体互动,在这些团体中,在我们的进步可以被充分利用之前,有必要进行进一步的研究。一个例子是光学成像技术,它将受益于我们将生产的设备的更快的数据采集速度、更好的便携性和更低的价格,以便能够对皮肤癌或导致失明的视网膜疾病进行早期诊断。
项目成果
期刊论文数量(7)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates.
- DOI:10.1364/oe.24.006196
- 发表时间:2016-03
- 期刊:
- 影响因子:3.8
- 作者:J. Orchard;S. Shutts;A. Sobiesierski;Jiang Wu;M. Tang;Siming Chen;Q. Jiang;S. Elliott;R. Beanland;Huiyun Liu;P. Smowton;D. Mowbray
- 通讯作者:J. Orchard;S. Shutts;A. Sobiesierski;Jiang Wu;M. Tang;Siming Chen;Q. Jiang;S. Elliott;R. Beanland;Huiyun Liu;P. Smowton;D. Mowbray
Fermi-dirac and random carrier distributions in quantum dot lasers
- DOI:10.1063/1.4862813
- 发表时间:2014-01-20
- 期刊:
- 影响因子:4
- 作者:Hutchings, M.;O'Driscoll, I.;Blood, P.
- 通讯作者:Blood, P.
Electrically pumped continuous-wave III-V quantum dot lasers on silicon
- DOI:10.1038/nphoton.2016.21
- 发表时间:2016-05-01
- 期刊:
- 影响因子:35
- 作者:Chen, Siming;Li, Wei;Liu, Huiyun
- 通讯作者:Liu, Huiyun
Monolithic quantum-dot distributed feedback laser array on silicon
- DOI:10.1364/optica.5.000528
- 发表时间:2018-05-20
- 期刊:
- 影响因子:10.4
- 作者:Wang, Yi;Chen, Siming;Yu, Siyuan
- 通讯作者:Yu, Siyuan
Improving the Optical Bandwidth of Passively Mode-Locked InAs Quantum Dot Lasers
提高被动锁模 InAs 量子点激光器的光学带宽
- DOI:10.1109/jstqe.2015.2416675
- 发表时间:2015
- 期刊:
- 影响因子:4.9
- 作者:Finch P
- 通讯作者:Finch P
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Peter Smowton其他文献
Peter Smowton的其他文献
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{{ truncateString('Peter Smowton', 18)}}的其他基金
Stream 2: South Wales Compound Semiconductor Place Based Impact Accelerator
分流 2:南威尔士化合物半导体地方影响加速器
- 批准号:
EP/Y024184/1 - 财政年份:2024
- 资助金额:
$ 88.99万 - 项目类别:
Research Grant
Characterizing modulating retroreflectors for laser comms
表征激光通信的调制后向反射器
- 批准号:
NE/V009931/1 - 财政年份:2020
- 资助金额:
$ 88.99万 - 项目类别:
Research Grant
MacV: Miniaturised atomic clocks using VCSEL pump sources
MacV:使用 VCSEL 泵浦源的微型原子钟
- 批准号:
EP/P034179/1 - 财政年份:2017
- 资助金额:
$ 88.99万 - 项目类别:
Research Grant
Future Compound Semiconductor Manufacturing Hub
未来化合物半导体制造中心
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EP/P006973/1 - 财政年份:2016
- 资助金额:
$ 88.99万 - 项目类别:
Research Grant
Integrated III-V Haemocytometer
集成 III-V 血细胞计数器
- 批准号:
EP/L005409/1 - 财政年份:2013
- 资助金额:
$ 88.99万 - 项目类别:
Research Grant
Platform Renewal - Optical gain and recombination in structured materials
平台更新 - 结构材料中的光学增益和复合
- 批准号:
EP/F006683/1 - 财政年份:2008
- 资助金额:
$ 88.99万 - 项目类别:
Research Grant
InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission
用于 650-780nm 发射的 InP / AlGaInP 量子点激光器
- 批准号:
EP/E056385/1 - 财政年份:2007
- 资助金额:
$ 88.99万 - 项目类别:
Research Grant
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